Paper Abstract and Keywords |
Presentation |
2016-10-27 10:00
Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73 Link to ES Tech. Rep. Archives: SDM2016-73 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulator-Metal) capacitors. In the former study, it was confirmed that Al2O3 can be formed without oxidizing Al2O3/Si interface by ALD (Atomic Layer Deposition) at stage temperature of 75℃. However, in this case, fixed oxide charge increases because of low oxidation ability. PDP (Post Deposition Process) is an effective way to solve this problem. In this study, Al2O3 and Al2O3/substrate interface are evaluated by electrical characteristics, RBS (Rutherford Backscattering Spectroscopy) and HAXPES (Hard X-ray Photoelectron Spectroscopy) measurement when PDP by different oxidizing species are introduced. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Al2O3 / ALD / PDP / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 270, SDM2016-73, pp. 27-30, Oct. 2016. |
Paper # |
SDM2016-73 |
Date of Issue |
2016-10-19 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2016-73 Link to ES Tech. Rep. Archives: SDM2016-73 |
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