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Paper Abstract and Keywords
Presentation 2016-10-28 13:00
[Invited Talk] Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors
Kei Noda, Haruki Nagahama, Ryo Yamamoto, Yasuo Wada (Keio Univ.), Toru Toyabe (Toyo Univ.) OME2016-38
Abstract (in Japanese) (See Japanese page) 
(in English) Device fabrication and simulation analysis of organic thin-film transistors, which especially focused on contact doping and chemical modification of the electrode surfaces, were performed. The analysis results for contact-doped pentacene thin-film transistors with bottom-gate, top-contact configuration indicate the improved carrier injection due to the reduction of the thickness of the tunneling barrier at the source/semiconductor interface. Additionally, for bottom-gate, bottom-contact pentacene transistors with gold source-drain electrodes treated with pentafluorobenzenethiol, both the decrease in the carrier injection barrier and the improvement of the film structure at the electrode/semiconductor interface should be considered for discussing and understanding the effects of the contact modification in detail.
Keyword (in Japanese) (See Japanese page) 
(in English) Organic Thin-Film Transistor / Contact Modification / Device Simulation / Schottky Barrier / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 281, OME2016-38, pp. 1-4, Oct. 2016.
Paper # OME2016-38 
Date of Issue 2016-10-21 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2016-38

Conference Information
Committee OME  
Conference Date 2016-10-28 - 2016-10-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic device, Materials, General 
Paper Information
Registration To OME 
Conference Code 2016-10-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors 
Sub Title (in English)  
Keyword(1) Organic Thin-Film Transistor  
Keyword(2) Contact Modification  
Keyword(3) Device Simulation  
Keyword(4) Schottky Barrier  
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1st Author's Name Kei Noda  
1st Author's Affiliation Keio University (Keio Univ.)
2nd Author's Name Haruki Nagahama  
2nd Author's Affiliation Keio University (Keio Univ.)
3rd Author's Name Ryo Yamamoto  
3rd Author's Affiliation Keio University (Keio Univ.)
4th Author's Name Yasuo Wada  
4th Author's Affiliation Keio University (Keio Univ.)
5th Author's Name Toru Toyabe  
5th Author's Affiliation Toyo Universiry (Toyo Univ.)
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Speaker Author-1 
Date Time 2016-10-28 13:00:00 
Presentation Time 40 minutes 
Registration for OME 
Paper # OME2016-38 
Volume (vol) vol.116 
Number (no) no.281 
Page pp.1-4 
#Pages 4 
Date of Issue 2016-10-21 (OME) 

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