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Paper Abstract and Keywords
Presentation 2016-11-10 11:00
[Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80
Abstract (in Japanese) (See Japanese page) 
(in English) We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS). The TED MOS structure provides three types of channels: trench-side-wall (TSW), top, and bottom. The mobility of the TSW channels is about three times higher than that of the top channel. We report that TED MOS gives more advantageous than conventional SiC trench MOSs.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon carbide / SiC / Trench / DMOS / Mobility / Trap / Charge pumping / Interface trap  
Reference Info. IEICE Tech. Rep., vol. 116, no. 296, SDM2016-80, pp. 9-14, Nov. 2016.
Paper # SDM2016-80 
Date of Issue 2016-11-03 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2016-11-10 - 2016-11-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2016-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) 
Sub Title (in English)  
Keyword(1) Silicon carbide  
Keyword(2) SiC  
Keyword(3) Trench  
Keyword(4) DMOS  
Keyword(5) Mobility  
Keyword(6) Trap  
Keyword(7) Charge pumping  
Keyword(8) Interface trap  
1st Author's Name Naoki Tega  
1st Author's Affiliation Hitachi, Ltd. (Hitachi)
2nd Author's Name Digh Hisamoto  
2nd Author's Affiliation Hitachi, Ltd. (Hitachi)
3rd Author's Name Akio Shima  
3rd Author's Affiliation Hitachi, Ltd. (Hitachi)
4th Author's Name Yasuhiro Shimamoto  
4th Author's Affiliation Hitachi, Ltd. (Hitachi)
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Speaker Author-1 
Date Time 2016-11-10 11:00:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2016-80 
Volume (vol) vol.116 
Number (no) no.296 
Page pp.9-14 
#Pages 6 
Date of Issue 2016-11-03 (SDM) 

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