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Paper Abstract and Keywords
Presentation 2016-12-12 13:25
Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy
Kenji Shiojima, Shingo Murase, Masataka Maeda (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2016-58 CPM2016-91 LQE2016-74
Abstract (in Japanese) (See Japanese page) 
(in English) We characterized an early stage of interface degradation by high-reverse-voltage application in Au/Ni/n-GaN Schottky contacts using scanning internal photoemission (SIPM). Photocurrent was fairly uniform over the dot without the voltage application. However after applying voltage stress with a current compliance of 1×10-8 A, we find some spots standing out from uniform surrounding. The calculated forward I-V curve from the SIPM results was closed to the experimental one. It is speculated that the leakage current can preferentially flow through the low-barrier spots before catastrophic degradation. We confirmed that SIPM is a powerful tool for characterizing an early stage of interface degradation in Schottky contacts.
Keyword (in Japanese) (See Japanese page) 
(in English) n-GaN / Schottky contact / Scanning internal photoemission microscopy / degradation by voltage stress / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 356, ED2016-58, pp. 5-8, Dec. 2016.
Paper # ED2016-58 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-58 CPM2016-91 LQE2016-74

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To ED 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Observation of Initial Stage of Degradation in Au/Ni/n-GaN Schottky Diodes Using Scanning Internal Photoemission Microscopy 
Sub Title (in English)  
Keyword(1) n-GaN  
Keyword(2) Schottky contact  
Keyword(3) Scanning internal photoemission microscopy  
Keyword(4) degradation by voltage stress  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenji Shiojima  
1st Author's Affiliation University of Fukuiv (Univ. of Fukui)
2nd Author's Name Shingo Murase  
2nd Author's Affiliation University of Fukuiv (Univ. of Fukui)
3rd Author's Name Masataka Maeda  
3rd Author's Affiliation University of Fukuiv (Univ. of Fukui)
4th Author's Name Tomoyoshi Mishima  
4th Author's Affiliation Hosei University (Hosei Univ.)
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Speaker Author-1 
Date Time 2016-12-12 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-58, CPM2016-91, LQE2016-74 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.5-8 
#Pages 4 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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