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Paper Abstract and Keywords
Presentation 2016-12-12 09:30
Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells
Song Zhang, Yasuaki Yishikawa, Itaru Raifuku, Tiphaine Bourgeteau, Yukiharu Uraoka (NAIST), Erik Johnson, Martin Foldyna, Yvan Bonnassieux, Pere Roca i Cabarrocas (Ecole polytechnique) EID2016-9 SDM2016-90
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, the study of tandem solar cells that enable to achieve high efficiency has gathered much attention. The recombination layer between the two types of solar cells is critical issue because of its important role in connecting the solar cells in series. In this study, the junction between a hole-transport layer for perovskite solar cells with a microcrystalline Si (µcSi) layer is investigated as a recombination layer of perovskite/µcSi tandem solar cell. The complex growth of NiO thin films deposited by RF sputtering is first investigated to determine optimum growth conditions to obtain a compact and thin layer of NiO. Then, NiO/(p or n)-µcSi recombination layers are designed and measured. The measured current density of NiO/p-µcSi layer reached 154 mA/cm2 when the applied voltage was over 1.15 V, indicating that NiO/p-µcSi is a promising structure to be used as a recombination layer in perovskite/µcSi tandem solar cells.
Keyword (in Japanese) (See Japanese page) 
(in English) Tandem solar cell / Perovskite / Recombination layer / Hole-transport layer / NiO sputtering / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 355, SDM2016-90, pp. 1-6, Dec. 2016.
Paper # SDM2016-90 
Date of Issue 2016-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM EID  
Conference Date 2016-12-12 - 2016-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon Related Materials 
Paper Information
Registration To SDM 
Conference Code 2016-12-SDM-EID 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of recombination layer in Perovskite/Microcrystalline Si tandem solar cells 
Sub Title (in English)  
Keyword(1) Tandem solar cell  
Keyword(2) Perovskite  
Keyword(3) Recombination layer  
Keyword(4) Hole-transport layer  
Keyword(5) NiO sputtering  
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1st Author's Name Song Zhang  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Yasuaki Yishikawa  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Itaru Raifuku  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Tiphaine Bourgeteau  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Yukiharu Uraoka  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Erik Johnson  
6th Author's Affiliation Ecole polytechnique (Ecole polytechnique)
7th Author's Name Martin Foldyna  
7th Author's Affiliation Ecole polytechnique (Ecole polytechnique)
8th Author's Name Yvan Bonnassieux  
8th Author's Affiliation Ecole polytechnique (Ecole polytechnique)
9th Author's Name Pere Roca i Cabarrocas  
9th Author's Affiliation Ecole polytechnique (Ecole polytechnique)
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Speaker Author-1 
Date Time 2016-12-12 09:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2016-9, SDM2016-90 
Volume (vol) vol.116 
Number (no) no.354(EID), no.355(SDM) 
Page pp.1-6 
#Pages 6 
Date of Issue 2016-12-05 (EID, SDM) 

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