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Paper Abstract and Keywords
Presentation 2016-12-12 14:45
Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC
Taro Enokizono, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) EID2016-22 SDM2016-103
Abstract (in Japanese) (See Japanese page) 
(in English) In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes supplied from p-type SiC to the SiC/electrolyte interface. Subsequently, the formed oxide (SiOx) is removed (chemically etched) by the electrolyte. The EC etching suffers from formation of etch pits at the places where dislocations intersect the surface. In this study, we found two modes of EC etching from the viewpoint of rate balance between the oxidation of SiC by current flow and the removal of formed oxide by electrolyte, and we tried to suppress the formation of etch pits by controlling the etching mode.
Keyword (in Japanese) (See Japanese page) 
(in English) p-SiC / electrochemical etching / etch pit / dislocation / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 355, SDM2016-103, pp. 59-62, Dec. 2016.
Paper # SDM2016-103 
Date of Issue 2016-12-05 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2016-22 SDM2016-103

Conference Information
Committee SDM EID  
Conference Date 2016-12-12 - 2016-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon Related Materials 
Paper Information
Registration To SDM 
Conference Code 2016-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC 
Sub Title (in English)  
Keyword(1) p-SiC  
Keyword(2) electrochemical etching  
Keyword(3) etch pit  
Keyword(4) dislocation  
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1st Author's Name Taro Enokizono  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Tsunenobu Kimoto  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Jun Suda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2016-12-12 14:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2016-22, SDM2016-103 
Volume (vol) vol.116 
Number (no) no.354(EID), no.355(SDM) 
Page pp.59-62 
#Pages 4 
Date of Issue 2016-12-05 (EID, SDM) 

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