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Paper Abstract and Keywords
Presentation 2016-12-12 13:00
Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates
Junji Kotani, Atsushi Yamada, Tetsuro Ishiguro, Norikazu Nakamura (Fujitsu Lab.) ED2016-57 CPM2016-90 LQE2016-73
Abstract (in Japanese) (See Japanese page) 
(in English) This paper investigate the effects of threading dislocation density on the leakage characteristics of Ni/Au Schottky diodes fabricated on InAlN high-electron-mobility transistor (HEMT) structures. Threading dislocation densities were determined to be 1.8E4 cm-2 and 1.2E9 cm-2 for the HEMT structures grown on GaN and sapphire substrates, respectively. Leakage characteristics of Ni/Au Schottky diodes were compared between the two samples and a reduction of the leakage current of about three to four orders of magnitude was observed in the forward bias region. For the high reverse bias region, however, no significant improvement was confirmed. We believe the leakage current in the low bias region is governed by a dislocation-related Frenkel-Poole emission and the leakage current in the high reverse bias region originates from field emission due to the large internal electric field in the InAlN barrier layer.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / InAlN / Schottky diode / Gate leakage current / Dislocation / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 356, ED2016-57, pp. 1-4, Dec. 2016.
Paper # ED2016-57 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-57 CPM2016-90 LQE2016-73

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To ED 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current-voltage characteristics of Ni/Au Schottky diodes fabricated on InAlN/AlN/GaN heterostructures grown on GaN substrates 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) InAlN  
Keyword(4) Schottky diode  
Keyword(5) Gate leakage current  
Keyword(6) Dislocation  
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Keyword(8)  
1st Author's Name Junji Kotani  
1st Author's Affiliation Fujitsu laboratories (Fujitsu Lab.)
2nd Author's Name Atsushi Yamada  
2nd Author's Affiliation Fujitsu laboratories (Fujitsu Lab.)
3rd Author's Name Tetsuro Ishiguro  
3rd Author's Affiliation Fujitsu laboratories (Fujitsu Lab.)
4th Author's Name Norikazu Nakamura  
4th Author's Affiliation Fujitsu laboratories (Fujitsu Lab.)
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Speaker Author-1 
Date Time 2016-12-12 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-57, CPM2016-90, LQE2016-73 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.1-4 
#Pages 4 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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