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Paper Abstract and Keywords
Presentation 2016-12-12 15:20
Evaluating Current Collapse of GaN HEMT devices by Carrier Number
Kohei Oasa, Akira Yoshioka, Yasunobu Saito, Takuo Kikuchi, Tatsuya Ohguro, Takeshi Hamamoto, Toru Sugiyama (TOSHIBA) ED2016-62 CPM2016-95 LQE2016-78 Link to ES Tech. Rep. Archives: ED2016-62 CPM2016-95 LQE2016-78
Abstract (in Japanese) (See Japanese page) 
(in English) We report a new method to evaluate current collapse. To exclude self-heating effect during dynamic test, we propose carrier number as a new indicator. Carrier number could be evaluated from capacitance measurement. Change in capacitance gives direct evidence of carrier decrease and the region it occurs. Proposed method was verified and confirmed to have a high accuracy by comparing with dynamic testing results. New method makes it possible to evaluate the change of carrier number and mobility independently, which can be used to model and solve the current collapse phenomenon.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Nitride / Power Devices / Current Collapse / Carrier Number / Capacitance Measurement / Field Plate / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 356, ED2016-62, pp. 27-30, Dec. 2016.
Paper # ED2016-62 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-62 CPM2016-95 LQE2016-78 Link to ES Tech. Rep. Archives: ED2016-62 CPM2016-95 LQE2016-78

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To ED 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluating Current Collapse of GaN HEMT devices by Carrier Number 
Sub Title (in English)  
Keyword(1) Gallium Nitride  
Keyword(2) Power Devices  
Keyword(3) Current Collapse  
Keyword(4) Carrier Number  
Keyword(5) Capacitance Measurement  
Keyword(6) Field Plate  
1st Author's Name Kohei Oasa  
1st Author's Affiliation Toshiba Corp. (TOSHIBA)
2nd Author's Name Akira Yoshioka  
2nd Author's Affiliation Toshiba Corp. (TOSHIBA)
3rd Author's Name Yasunobu Saito  
3rd Author's Affiliation Toshiba Corp. (TOSHIBA)
4th Author's Name Takuo Kikuchi  
4th Author's Affiliation Toshiba Corp. (TOSHIBA)
5th Author's Name Tatsuya Ohguro  
5th Author's Affiliation Toshiba Corp. (TOSHIBA)
6th Author's Name Takeshi Hamamoto  
6th Author's Affiliation Toshiba Corp. (TOSHIBA)
7th Author's Name Toru Sugiyama  
7th Author's Affiliation Toshiba Corp. (TOSHIBA)
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Speaker Author-1 
Date Time 2016-12-12 15:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-62, CPM2016-95, LQE2016-78 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.27-30 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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