Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2016-12-13 08:40
Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes
Keigo Matsuura, Shigeta Sakai, Atsushi A. Yamaguchi (KIT) ED2016-67 CPM2016-100 LQE2016-83
Abstract (in Japanese) (See Japanese page) 
(in English) In order to realize low-cost high-performance green semiconductor laser diodes (LDs), we proposed semipolar InGaN quantum-well (QW) LDs with cleaved facet cavity mirrors. It has been pointed out, however, that optical gain in the QW layers cannot be fully utilized due to the mismatch of the polarization properties between the waveguide modes and optical gain characteristics in the active region. In this work, we have found that this mismatch can be largely reduced by tuning the waveguide structure.
Keyword (in Japanese) (See Japanese page) 
(in English) semipolar InGaN quantum well / optical gain / waveguide mode / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 358, LQE2016-83, pp. 51-54, Dec. 2016.
Paper # LQE2016-83 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-67 CPM2016-100 LQE2016-83

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To LQE 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Enhancement of Optical Gain by Controlling Waveguide Modes in Semipolar InGaN Quantum Well Laser Diodes 
Sub Title (in English)  
Keyword(1) semipolar InGaN quantum well  
Keyword(2) optical gain  
Keyword(3) waveguide mode  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Keigo Matsuura  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Shigeta Sakai  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Atsushi A. Yamaguchi  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2016-12-13 08:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2016-67, CPM2016-100, LQE2016-83 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.51-54 
#Pages 4 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan