Paper Abstract and Keywords |
Presentation |
2016-12-13 10:30
Crystal growth of bulk AlN by a clean process Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-71 CPM2016-104 LQE2016-87 Link to ES Tech. Rep. Archives: ED2016-71 CPM2016-104 LQE2016-87 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and clean method using Al and N2 as precursors. When AlN is grown on sapphire using the EVPE method, voids are formed at the AlN/sapphire interface, which assists the growth of crack-free AlN thick films (18 μm). This report shows that the state of the interface including these voids can be controlled via the supply timing of N2. If excessive voids are formed, self-separation is also possible, suggesting the elimination of the substrate-removal process when bulk AlN is fabricated in the future. Comparison of crack-free AlN on sapphire and self-separating AlN shows that strain due to thermal stress remains in the former, and is almost relaxed in the latter. Moreover, the dislocation densities decrease as the thickness increases. This is probably because high density dislocations near the AlN/sapphire interface terminate each other by a lateral growth across voids at the initial growth stage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlN / Bulk / EVPE / Self-separation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 358, LQE2016-87, pp. 71-74, Dec. 2016. |
Paper # |
LQE2016-87 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-71 CPM2016-104 LQE2016-87 Link to ES Tech. Rep. Archives: ED2016-71 CPM2016-104 LQE2016-87 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2016-12-12 - 2016-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride semiconductors, optoelectronic devices, and related materials |
Paper Information |
Registration To |
LQE |
Conference Code |
2016-12-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Crystal growth of bulk AlN by a clean process |
Sub Title (in English) |
|
Keyword(1) |
AlN |
Keyword(2) |
Bulk |
Keyword(3) |
EVPE |
Keyword(4) |
Self-separation |
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Katsuhiro Kishimoto |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Wu PeiTsen |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Mitsuru Funato |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Yoichi Kawakami |
4th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2016-12-13 10:30:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2016-71, CPM2016-104, LQE2016-87 |
Volume (vol) |
vol.116 |
Number (no) |
no.356(ED), no.357(CPM), no.358(LQE) |
Page |
pp.71-74 |
#Pages |
4 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
|