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Paper Abstract and Keywords
Presentation 2016-12-13 10:30
Crystal growth of bulk AlN by a clean process
Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-71 CPM2016-104 LQE2016-87 Link to ES Tech. Rep. Archives: ED2016-71 CPM2016-104 LQE2016-87
Abstract (in Japanese) (See Japanese page) 
(in English) We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and clean method using Al and N2 as precursors. When AlN is grown on sapphire using the EVPE method, voids are formed at the AlN/sapphire interface, which assists the growth of crack-free AlN thick films (18 μm). This report shows that the state of the interface including these voids can be controlled via the supply timing of N2. If excessive voids are formed, self-separation is also possible, suggesting the elimination of the substrate-removal process when bulk AlN is fabricated in the future. Comparison of crack-free AlN on sapphire and self-separating AlN shows that strain due to thermal stress remains in the former, and is almost relaxed in the latter. Moreover, the dislocation densities decrease as the thickness increases. This is probably because high density dislocations near the AlN/sapphire interface terminate each other by a lateral growth across voids at the initial growth stage.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / Bulk / EVPE / Self-separation / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 358, LQE2016-87, pp. 71-74, Dec. 2016.
Paper # LQE2016-87 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2016-71 CPM2016-104 LQE2016-87 Link to ES Tech. Rep. Archives: ED2016-71 CPM2016-104 LQE2016-87

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To LQE 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystal growth of bulk AlN by a clean process 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) Bulk  
Keyword(3) EVPE  
Keyword(4) Self-separation  
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1st Author's Name Katsuhiro Kishimoto  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Wu PeiTsen  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Mitsuru Funato  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoichi Kawakami  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2016-12-13 10:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2016-71, CPM2016-104, LQE2016-87 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.71-74 
#Pages
Date of Issue 2016-12-05 (ED, CPM, LQE) 


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