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Paper Abstract and Keywords
Presentation 2016-12-13 11:20
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip
Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89
Abstract (in Japanese) (See Japanese page) 
(in English) A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consisting of a GaN-µLED and a Si-nMOSFET was integrated onto the Si/SiO2/GaN-LED wafer. From a thermal tolerance of Si/SiO2/GaN-LED structure, we found that the high thermal tolerance of a thin top-Si layer on the Si/SiO2/GaN-LED structure allows a monolithic integration process of GaN-based optical devices and Si-integrated circuits. Static characteristics of GaN-µLED and Si-nMOSFET showed typical device performance without critical degradation of either device. A GaN-µLED driver circuit performed over 10 MHz of modulation bandwidth estimated by pulse driving measurement.
Keyword (in Japanese) (See Japanese page) 
(in English) optoelectronic integrated circuit / wafer bonding / GaN-µLED / monolithic integration / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 358, LQE2016-89, pp. 79-83, Dec. 2016.
Paper # LQE2016-89 
Date of Issue 2016-12-05 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-73 CPM2016-106 LQE2016-89

Conference Information
Committee CPM LQE ED  
Conference Date 2016-12-12 - 2016-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride semiconductors, optoelectronic devices, and related materials 
Paper Information
Registration To LQE 
Conference Code 2016-12-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip 
Sub Title (in English)  
Keyword(1) optoelectronic integrated circuit  
Keyword(2) wafer bonding  
Keyword(3) GaN-µLED  
Keyword(4) monolithic integration  
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1st Author's Name Kazuaki Tsuchiyama  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
2nd Author's Name Shu Utsuhomiya  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
3rd Author's Name Shota Nakagawa  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
4th Author's Name Keisuke Yamane  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
5th Author's Name Hiroto Sekiguchi  
5th Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
6th Author's Name Hiroshi Okada  
6th Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
7th Author's Name Akihiro Wakahara  
7th Author's Affiliation Toyohashi University of Technology (Toyohashi Tech.)
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Speaker Author-1 
Date Time 2016-12-13 11:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2016-73, CPM2016-106, LQE2016-89 
Volume (vol) vol.116 
Number (no) no.356(ED), no.357(CPM), no.358(LQE) 
Page pp.79-83 
#Pages 5 
Date of Issue 2016-12-05 (ED, CPM, LQE) 

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