Paper Abstract and Keywords |
Presentation |
2016-12-15 11:10
A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination using a T Shaped Stab for Two Harmonics Yuki Takagi, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2016-138 Link to ES Tech. Rep. Archives: MW2016-138 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A microwave multiband high-efficiency power amplier is required for the next-generation mobile communication system to increase information quantity. We have been developing multiband and high-efficiency GaN HEMT ampliers based on a harmonic reactive termination technique. However, it is difficult for the multiband circuit conguration to increase the treated harmonics, because, for the harmonics, many =4 open-ended stabs have to be connected on one main transmission line with narrow spacing in order to make short points on it. For this issue, a T-shaped stab is employed to make a short point for two harmonics. In addition, a stepped impedance transmission line is employed to adjust reactance values for the two harmonics simultaneously. To verify the proposed circuit conguration, a 4.5-GHz band GaN HEMT amplier using the T-shaped stab was fabricated. It delivered a maximum power-added efficiency of 68 % at 4.46 GHz and a maximum drain efficiency of 73 % at 4.47 GHz. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
microwave / power amplier / harmonic tuning / high efficiency / GaN HEMT / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 363, MW2016-138, pp. 35-40, Dec. 2016. |
Paper # |
MW2016-138 |
Date of Issue |
2016-12-08 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
MW2016-138 Link to ES Tech. Rep. Archives: MW2016-138 |
Conference Information |
Committee |
MW |
Conference Date |
2016-12-15 - 2016-12-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
National Defense Academy |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Students Session / Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2016-12-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination using a T Shaped Stab for Two Harmonics |
Sub Title (in English) |
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Keyword(1) |
microwave |
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power amplier |
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harmonic tuning |
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high efficiency |
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GaN HEMT |
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1st Author's Name |
Yuki Takagi |
1st Author's Affiliation |
The University of Electro-Communications (UEC) |
2nd Author's Name |
Ryo Ishikawa |
2nd Author's Affiliation |
The University of Electro-Communications (UEC) |
3rd Author's Name |
Kazuhiko Honjo |
3rd Author's Affiliation |
The University of Electro-Communications (UEC) |
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Speaker |
Author-1 |
Date Time |
2016-12-15 11:10:00 |
Presentation Time |
20 minutes |
Registration for |
MW |
Paper # |
MW2016-138 |
Volume (vol) |
vol.116 |
Number (no) |
no.363 |
Page |
pp.35-40 |
#Pages |
6 |
Date of Issue |
2016-12-08 (MW) |
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