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Paper Abstract and Keywords
Presentation 2016-12-15 11:10
A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination using a T Shaped Stab for Two Harmonics
Yuki Takagi, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2016-138
Abstract (in Japanese) (See Japanese page) 
(in English) A microwave multiband high-efficiency power ampli er is required for the next-generation mobile communication system to increase information quantity. We have been developing multiband and high-efficiency GaN HEMT ampli ers based on a harmonic reactive termination technique. However, it is difficult for the multiband circuit con guration to increase the treated harmonics, because, for the harmonics, many =4 open-ended stabs have to be connected on one main transmission line with narrow spacing in order to make short points on it. For this issue, a T-shaped stab is employed to make a short point for two harmonics. In addition, a stepped impedance transmission line is employed to adjust reactance values for the two harmonics simultaneously. To verify the proposed circuit con guration, a 4.5-GHz band GaN HEMT ampli er using the T-shaped stab was fabricated. It delivered a maximum power-added efficiency of 68 ％ at 4.46 GHz and a maximum drain efficiency of 73 ％ at 4.47 GHz.
Keyword (in Japanese) (See Japanese page) 
(in English) microwave / power ampli er / harmonic tuning / high efficiency / GaN HEMT / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 363, MW2016-138, pp. 35-40, Dec. 2016.
Paper # MW2016-138 
Date of Issue 2016-12-08 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2016-138

Conference Information
Committee MW  
Conference Date 2016-12-15 - 2016-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) National Defense Academy 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Students Session / Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2016-12-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A High-Efficiency GaN HEMT Power Amplifier with Harmonic Reactive Termination using a T Shaped Stab for Two Harmonics 
Sub Title (in English)  
Keyword(1) microwave  
Keyword(2) power ampli er  
Keyword(3) harmonic tuning  
Keyword(4) high efficiency  
Keyword(5) GaN HEMT  
Keyword(6)  
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1st Author's Name Yuki Takagi  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Ryo Ishikawa  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Kazuhiko Honjo  
3rd Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2016-12-15 11:10:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # MW2016-138 
Volume (vol) vol.116 
Number (no) no.363 
Page pp.35-40 
#Pages 6 
Date of Issue 2016-12-08 (MW) 

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