Paper Abstract and Keywords |
Presentation |
2016-12-15 15:30
[Poster Presentation]
Reduction of Data-Retention Error in TLC NAND Flash Memories Yuichi Sato, Yoshiaki Deguchi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2016-76 CPSY2016-82 Link to ES Tech. Rep. Archives: ICD2016-76 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The cost of NAND flash memory is reduced by scaling and multi-level cell technologies. However, the reliability of triple-level cell (TLC : 3-bit/cell) NAND flash is degraded due to the narrower read margins. Moreover, due to the write/erase endurance stress, traps which may capture electrons are generated in the tunnel oxide. Data-retention error is caused by ejecting electrons from the floating-gate via traps. Reliability is degraded by scaling since the threshold voltage is more decreased when one electron ejects. This paper reports data-retention error reduction technique of TLC NAND flash memory. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NAND flash memory / Reliability / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 364, ICD2016-76, pp. 75-75, Dec. 2016. |
Paper # |
ICD2016-76 |
Date of Issue |
2016-12-08 (ICD, CPSY) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2016-76 CPSY2016-82 Link to ES Tech. Rep. Archives: ICD2016-76 |
Conference Information |
Committee |
ICD CPSY |
Conference Date |
2016-12-15 - 2016-12-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Institute of Technology |
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Paper Information |
Registration To |
ICD |
Conference Code |
2016-12-ICD-CPSY |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Reduction of Data-Retention Error in TLC NAND Flash Memories |
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Keyword(1) |
NAND flash memory |
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Reliability |
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1st Author's Name |
Yuichi Sato |
1st Author's Affiliation |
Chuo University (Chuo Univ.) |
2nd Author's Name |
Yoshiaki Deguchi |
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Chuo University (Chuo Univ.) |
3rd Author's Name |
Atsuro Kobayashi |
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Chuo University (Chuo Univ.) |
4th Author's Name |
Ken Takeuchi |
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Chuo University (Chuo Univ.) |
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Speaker |
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Date Time |
2016-12-15 15:30:00 |
Presentation Time |
120 minutes |
Registration for |
ICD |
Paper # |
ICD2016-76, CPSY2016-82 |
Volume (vol) |
vol.116 |
Number (no) |
no.364(ICD), no.365(CPSY) |
Page |
p.75 |
#Pages |
1 |
Date of Issue |
2016-12-08 (ICD, CPSY) |
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