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Paper Abstract and Keywords
Presentation 2016-12-15 15:30
[Poster Presentation] Error Pattern Analysis among Scaled Generations of NAND Flash Memories
Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi (Chuo Univ.) ICD2016-69 CPSY2016-75
Abstract (in Japanese) (See Japanese page) 
(in English) The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory cell scaling and reliability of NAND flash memory is decreased. NAND flash memory can store the data by injection electrons into the floating-gate. However, due to increases of inter-cell coupling noise and decreases of injection electrons, changes of VTH become remarkable by memory cell scaling. As a result, read-disturb error, program-disturb error, and data-retention error are occurred. This paper analyzes error pattern of some generations of NAND flash memory with various Write/Erase cycle and data-retention time.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND flash memory / solid-state-drive / basic properties / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 364, ICD2016-69, pp. 57-57, Dec. 2016.
Paper # ICD2016-69 
Date of Issue 2016-12-08 (ICD, CPSY) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2016-69 CPSY2016-75

Conference Information
Committee ICD CPSY  
Conference Date 2016-12-15 - 2016-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2016-12-ICD-CPSY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Error Pattern Analysis among Scaled Generations of NAND Flash Memories 
Sub Title (in English)  
Keyword(1) NAND flash memory  
Keyword(2) solid-state-drive  
Keyword(3) basic properties  
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1st Author's Name Yukiya Sakaki  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Yusuke Yamaga  
2nd Author's Affiliation Chuo University (Chuo Univ.)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ.)
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Speaker Author-1 
Date Time 2016-12-15 15:30:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2016-69, CPSY2016-75 
Volume (vol) vol.116 
Number (no) no.364(ICD), no.365(CPSY) 
Page p.57 
#Pages 1 
Date of Issue 2016-12-08 (ICD, CPSY) 

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