| Paper Abstract and Keywords |
| Presentation |
2016-12-15 11:30
Large Signal Characteristics and Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode Arisu Maruyama, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2016-139 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Power amplifiers that enable multi-access in the microwave band have not been studied in detail so far, and the behavior of the output power and efficiency characteristics simultaneous amplification has not been clarified.
To investigate output characteristics of the dual band power amplifier in concurrent operation mode using a single GaN,HEMT , the concurrent amplification operation using the $V_{g}I_{d}$ characteristics of the FET were analyzed and the output power compression by cross modulation was expected.
The fabricated GaN,HEMT amplifier showed abnormal output versus input nonliner power response at low input power level.
A stub for short-circuiting second order intermodulation component was added to the input matching circuit and the abnormal response was improved successfully. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Microwave / Dual-band power amplifier / Concurrent operation mode / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 116, no. 363, MW2016-139, pp. 41-46, Dec. 2016. |
| Paper # |
MW2016-139 |
| Date of Issue |
2016-12-08 (MW) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
MW2016-139 |
| Conference Information |
| Committee |
MW |
| Conference Date |
2016-12-15 - 2016-12-16 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
National Defense Academy |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Students Session / Microwave Technologies |
| Paper Information |
| Registration To |
MW |
| Conference Code |
2016-12-MW |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Large Signal Characteristics and Linearity Improvement for Single-GaN HEMT Dual-Band Power Amplifier in Concurrent Operation Mode |
| Sub Title (in English) |
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| Keyword(1) |
Microwave |
| Keyword(2) |
Dual-band power amplifier |
| Keyword(3) |
Concurrent operation mode |
| Keyword(4) |
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| 1st Author's Name |
Arisu Maruyama |
| 1st Author's Affiliation |
University of Electro-Communications (UEC) |
| 2nd Author's Name |
Yoichiro Takayama |
| 2nd Author's Affiliation |
University of Electro-Communications (UEC) |
| 3rd Author's Name |
Ryo Ishikawa |
| 3rd Author's Affiliation |
University of Electro-Communications (UEC) |
| 4th Author's Name |
Kazuhiko Honjo |
| 4th Author's Affiliation |
University of Electro-Communications (UEC) |
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| Speaker |
Author-1 |
| Date Time |
2016-12-15 11:30:00 |
| Presentation Time |
20 minutes |
| Registration for |
MW |
| Paper # |
MW2016-139 |
| Volume (vol) |
vol.116 |
| Number (no) |
no.363 |
| Page |
pp.41-46 |
| #Pages |
6 |
| Date of Issue |
2016-12-08 (MW) |