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Paper Abstract and Keywords
Presentation 2016-12-15 15:30
[Poster Presentation] A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories
Toshiki Nakamura, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) ICD2016-73 CPSY2016-79
Abstract (in Japanese) (See Japanese page) 
(in English) The capacity of NAND flash memory can be expanded by multi-level cell technology. In particular, 3-bit/cell triple-level cell (TLC) NAND flash memory realizes extremely high capacity and low cost. However, its narrower read margins of threshold voltage distribution increase data-retention error which degrades the reliability. Data-retention error is caused by ejecting electrons from the floating-gate with data-retention time due to the deterioration of the tunnel oxide. This paper analyzes data-retention error and reports highly reliable method with data-retention characteristics of TLC NAND flash memory.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND flash memory / Reliability / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 364, ICD2016-73, pp. 65-65, Dec. 2016.
Paper # ICD2016-73 
Date of Issue 2016-12-08 (ICD, CPSY) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2016-73 CPSY2016-79

Conference Information
Committee ICD CPSY  
Conference Date 2016-12-15 - 2016-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2016-12-ICD-CPSY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories 
Sub Title (in English)  
Keyword(1) NAND flash memory  
Keyword(2) Reliability  
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1st Author's Name Toshiki Nakamura  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Yoshiaki Deguchi  
2nd Author's Affiliation Chuo University (Chuo Univ.)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ.)
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Speaker Author-1 
Date Time 2016-12-15 15:30:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # ICD2016-73, CPSY2016-79 
Volume (vol) vol.116 
Number (no) no.364(ICD), no.365(CPSY) 
Page p.65 
#Pages 1 
Date of Issue 2016-12-08 (ICD, CPSY) 

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