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Paper Abstract and Keywords
Presentation 2016-12-19 14:40
Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2016-81
Abstract (in Japanese) (See Japanese page) 
(in English) We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs with various drain-side recess lengths Lrd’s at 300 and 16 K. The kink phenomenon was seen in the current-voltage (I-V) characteristics for all the measured HEMTs at 16 K. The peak cutoff frequency fT decreases with increasing Lrd both at 300 and 16 K. On the other hand, the maximum oscillation frequency fmax shows very complicated behavior both at 300 and 16 K. We found that there exists the most suitable Lrd value to increase fmax at each temperature and/or drain-source voltage Vds. Furthermore, we extracted the equivalent circuit parameters and discussed the trend of fT and fmax values. fT can be expressed by transconductance gm and gate capacitance Cg. gm decreases with increasing Lrd and Cg increases with increasing Lrd. fmax is mainly reflects the trend of drain conductance gd and gate-drain capacitance Cgd. The effect of gd is relatively large in the the longer Lrd region and the effect of Cgd is relatively large in the shorter Lrd region.
Keyword (in Japanese) (See Japanese page) 
(in English) InP HEMT / InAlAs/InGaAs / Cryogenic characteristics / Drain-side recess length / Cutoff frequency / Maximum oscillation frequency / Equivalent circuit parameters /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 375, ED2016-81, pp. 7-12, Dec. 2016.
Paper # ED2016-81 
Date of Issue 2016-12-12 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2016-12-19 - 2016-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2016-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Drain-Side Recess Length on DC and RF Characteristics of Cryogenic InP HEMTs 
Sub Title (in English)  
Keyword(1) InP HEMT  
Keyword(2) InAlAs/InGaAs  
Keyword(3) Cryogenic characteristics  
Keyword(4) Drain-side recess length  
Keyword(5) Cutoff frequency  
Keyword(6) Maximum oscillation frequency  
Keyword(7) Equivalent circuit parameters  
Keyword(8)  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Akifumi Kasamatsu  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Tsuyoshi Takahashi  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
5th Author's Name Shoichi Shiba  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
6th Author's Name Yasuhiro Nakasha  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
7th Author's Name Taisuke Iwai  
7th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
8th Author's Name Takashi Mimura  
8th Author's Affiliation Fujitsu Laboratories Ltd./National Institute of Information and Communications Technology (Fujitsu Labs./NICT)
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Speaker Author-1 
Date Time 2016-12-19 14:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-81 
Volume (vol) vol.116 
Number (no) no.375 
Page pp.7-12 
#Pages 6 
Date of Issue 2016-12-12 (ED) 

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