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Paper Abstract and Keywords
Presentation 2016-12-19 16:30
Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84
Abstract (in Japanese) (See Japanese page) 
(in English) Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating, high-speed THz detectors. However, their low light receiving efficiency is one of serious concerns because the focused spot size of free space THz wave is much smaller than the active area of ADGG-HEMTs. To improve this, we examine 1) increasing the effective active area by implementing series array of detectors and 2) shrinking the spot size by integrating a detector with a hyper-hemispherical silicon lens. We report the 4-fold enhancement of responsivity by series array of 4 detectors and the 6-fold enhancement by the silicon lens integration. Also, we discuss the frequency characteristics on silicon lens module.
Keyword (in Japanese) (See Japanese page) 
(in English) HEMT / Plasmon / THz detector / array / Si lens / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 375, ED2016-84, pp. 23-28, Dec. 2016.
Paper # ED2016-84 
Date of Issue 2016-12-12 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-84

Conference Information
Committee ED  
Conference Date 2016-12-19 - 2016-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2016-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration 
Sub Title (in English)  
Keyword(1) HEMT  
Keyword(2) Plasmon  
Keyword(3) THz detector  
Keyword(4) array  
Keyword(5) Si lens  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomotaka Hosotani  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Fuzuki Kasuya  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Hiroki Taniguchi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Takayuki Watanabe  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tetsuya Suemitsu  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Taiichi Otsuji  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Yuma Takida  
7th Author's Affiliation RIKEN (RIKEN)
8th Author's Name Hiromasa Ito  
8th Author's Affiliation RIKEN (RIKEN)
9th Author's Name Hiroaki Minamide  
9th Author's Affiliation RIKEN (RIKEN)
10th Author's Name Tadao Ishibashi  
10th Author's Affiliation NTT Electronics Techno (NTT Electronics Techno)
11th Author's Name Makoto Shimizu  
11th Author's Affiliation NTT Electronics (NEL)
12th Author's Name Akira Satou  
12th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2016-12-19 16:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-84 
Volume (vol) vol.116 
Number (no) no.375 
Page pp.23-28 
#Pages 6 
Date of Issue 2016-12-12 (ED) 

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