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| Presentation | 2017-01-26 15:50 [Invited Lecture] Current status and problems of epitaxial wafers for GaN electronic devices Yohei Otoki (SCIOCS)  ED2016-100 MW2016-176 Link to ES Tech. Rep. Archives: ED2016-100 MW2016-176 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaN electronic devices have been in the practical stage mainly for high frequency applications. In epitaxial growth, the tolerance range of growth conditions is narrower than that of GaAs, and then very precise control is necessary. In addition, since there are point defects which become traps in the crystal, it is very important to know and control them. Recently, improvements of device performance such as Schottky characteristics, linearity, high breakdown voltage, by using a high quality GaN substrate have been reported. Use of the substrate is expected in the near future | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / epitaxial growth / HEMT / Eletronic Devices / MOCVD / GaN substrate / Device performance / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 431, ED2016-100, pp. 19-22, Jan. 2017. | |
| Paper # | ED2016-100 | |
| Date of Issue | 2017-01-19 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-100 MW2016-176 Link to ES Tech. Rep. Archives: ED2016-100 MW2016-176 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2017-01-26 - 2017-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Current status and problems of epitaxial wafers for GaN electronic devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | epitaxial growth |
| Keyword(3) | HEMT |
| Keyword(4) | Eletronic Devices |
| Keyword(5) | MOCVD |
| Keyword(6) | GaN substrate |
| Keyword(7) | Device performance |
| Keyword(8) | |
| 1st Author's Name | Yohei Otoki |
| 1st Author's Affiliation | SCIOCS (SCIOCS) |
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| Speaker | Author-1 |
| Date Time | 2017-01-26 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-100, MW2016-176 |
| Volume (vol) | vol.116 |
| Number (no) | no.431(ED), no.432(MW) |
| Page | pp.19-22 |
| #Pages | 4 |
| Date of Issue | 2017-01-19 (ED, MW) |
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