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Paper Abstract and Keywords
Presentation 2017-01-26 16:15
[Invited Lecture] Characterization of Metal/GaN Schottky Contacts -- Review from the Early Days --
Kenji Shiojima (Univ. of Fukui) ED2016-101 MW2016-177
Abstract (in Japanese) (See Japanese page) 
(in English) We report our experimental results on GaN Schottky contacts in conjunction with a review of the development of GaN electron devices. We describe (i) thermal stability, (ii) correlation between dislocations and electrical characteristics (iii) current transport mechanism of p-GaN contacts, (iv) cleaved m-plane n-GaN Schottky contacts, and (v) mapping of the interfaces using scanning internal photoemission microscopy.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Schottky contact / Schottky barrier height / Current transport mechanism / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 431, ED2016-101, pp. 23-28, Jan. 2017.
Paper # ED2016-101 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-101 MW2016-177

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of Metal/GaN Schottky Contacts 
Sub Title (in English) Review from the Early Days 
Keyword(1) GaN  
Keyword(2) Schottky contact  
Keyword(3) Schottky barrier height  
Keyword(4) Current transport mechanism  
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1st Author's Name Kenji Shiojima  
1st Author's Affiliation University of Fukuiv (Univ. of Fukui)
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Speaker Author-1 
Date Time 2017-01-26 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-101, MW2016-177 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.23-28 
#Pages 6 
Date of Issue 2017-01-19 (ED, MW) 

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