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Paper Abstract and Keywords
Presentation 2017-01-27 09:30
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178
Abstract (in Japanese) (See Japanese page) 
(in English) Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-In0.53Ga0.47As heterojunction structure. Junction resistance was successfully decreased by removing an i-In0.52Al0.48As barrier layer from a conventional p+-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-In0.53Ga0.47As structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/Hz1/2 at 300 GHz
Keyword (in Japanese) (See Japanese page) 
(in English) Tunnel diode / Backward / Millimeter wave / Terahertz wave / GaAsSb / Noise / Detection / Sensitivity  
Reference Info. IEICE Tech. Rep., vol. 116, no. 431, ED2016-102, pp. 29-33, Jan. 2017.
Paper # ED2016-102 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-102 MW2016-178

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes 
Sub Title (in English)  
Keyword(1) Tunnel diode  
Keyword(2) Backward  
Keyword(3) Millimeter wave  
Keyword(4) Terahertz wave  
Keyword(5) GaAsSb  
Keyword(6) Noise  
Keyword(7) Detection  
Keyword(8) Sensitivity  
1st Author's Name Tsuyoshi Takahashi  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
2nd Author's Name Masaru Sato  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
3rd Author's Name Shoichi Shiba  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
4th Author's Name Yasuhiro Nakasha  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
5th Author's Name Naoki Hara  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
6th Author's Name Taisuke Iwai  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
7th Author's Name Naoya Okamoto  
7th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
8th Author's Name Keiji Watanabe  
8th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Labs.)
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Speaker Author-1 
Date Time 2017-01-27 09:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-102, MW2016-178 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.29-33 
#Pages 5 
Date of Issue 2017-01-19 (ED, MW) 

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