Paper Abstract and Keywords |
Presentation |
2017-01-27 09:30
Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 Link to ES Tech. Rep. Archives: ED2016-102 MW2016-178 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-In0.53Ga0.47As heterojunction structure. Junction resistance was successfully decreased by removing an i-In0.52Al0.48As barrier layer from a conventional p+-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-In0.53Ga0.47As structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/Hz1/2 at 300 GHz |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Tunnel diode / Backward / Millimeter wave / Terahertz wave / GaAsSb / Noise / Detection / Sensitivity |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 431, ED2016-102, pp. 29-33, Jan. 2017. |
Paper # |
ED2016-102 |
Date of Issue |
2017-01-19 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2016-102 MW2016-178 Link to ES Tech. Rep. Archives: ED2016-102 MW2016-178 |
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