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Paper Abstract and Keywords
Presentation 2017-01-27 11:34
Growth of GaN thin films by chemical vapor deposition using Ga vapor
Kensuke Fukasawa, Tsuyoshi Nagase, Yuichirou Masuda, Tetsuya Kouno, Hiroko Kominami, Hara kazuhiko (Shizuoka Univ.) EID2016-45
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium nitride (GaN) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using Ga vapor and NH3 gas. Low-temperature buffer layer was deposited at a substrate temperature (Tg) of 590 C and a NH3 gas flow rate (F(NH3)) of 1500 sccm, which was followed by the growth of GaN thin films at Tg of 1050~1100 C and F(NH3) of 500~1500 sccm. X-ray diffraction, surface and cross-sectional morphology, and photoluminescence have shown that the film structure and the luminescence property of the GaN thin films depend on Tg and F(NH3). We have found that the flat GaN thin film was grown at Tg of 1100 C and F(NH3) 500 sccm.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium nitride / Chemical vapor deposition / thin film growth / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 430, EID2016-45, pp. 125-128, Jan. 2017.
Paper # EID2016-45 
Date of Issue 2017-01-19 (EID) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2016-45

Conference Information
Committee EID ITE-IDY IEE-EDD IEIJ-SSL SID-JC  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokushima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Joint Meeting of Emissive/Non-emissive Displays 
Paper Information
Registration To EID 
Conference Code 2017-01-EID-IDY-EDD-SSL-JC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of GaN thin films by chemical vapor deposition using Ga vapor 
Sub Title (in English)  
Keyword(1) Gallium nitride  
Keyword(2) Chemical vapor deposition  
Keyword(3) thin film growth  
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1st Author's Name Kensuke Fukasawa  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Tsuyoshi Nagase  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yuichirou Masuda  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Tetsuya Kouno  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Hiroko Kominami  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Hara kazuhiko  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2017-01-27 11:34:00 
Presentation Time 8 minutes 
Registration for EID 
Paper # EID2016-45 
Volume (vol) vol.116 
Number (no) no.430 
Page pp.125-128 
#Pages 4 
Date of Issue 2017-01-19 (EID) 

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