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Paper Abstract and Keywords
Presentation 2017-01-27 14:25
C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network
Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high efficiency and high power over C-Ku band with 115 % relative bandwidth. The amplifier uses a series-shunt inductor matching network to reduce chip size and the impedance transformation ratio in the interstage matching. The fabricated MMIC chip dimensions are 4.15 mm by 4 mm. Measured small signal gain exceeds 15.4 dB and the output power reaches 40.2 ~ 41.6 dBm with PAE of 17.3 ~ 30.5% over the C-Ku band at 25 V power supply voltage. With a CW output power ripple of 1.4 dB, this work shows significant improvement compared to previous work.
Keyword (in Japanese) (See Japanese page) 
(in English) Amplifiers / High Power Amplifier / MMIC / Band width / GaN HEMT / Broadband / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 432, MW2016-186, pp. 75-79, Jan. 2017.
Paper # MW2016-186 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-110 MW2016-186

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network 
Sub Title (in English)  
Keyword(1) Amplifiers  
Keyword(2) High Power Amplifier  
Keyword(3) MMIC  
Keyword(4) Band width  
Keyword(5) GaN HEMT  
Keyword(6) Broadband  
Keyword(7)  
Keyword(8)  
1st Author's Name Eigo Kuwata  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Atsuo Sugimoto  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Hidetoshi Koyama  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Yoshitaka Kamo  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Ryota Komaru  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
6th Author's Name Koji Yamanaka  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
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Speaker Author-1 
Date Time 2017-01-27 14:25:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # ED2016-110, MW2016-186 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.75-79 
#Pages 5 
Date of Issue 2017-01-19 (ED, MW) 

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