Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-01-30 15:30
[Invited Talk] General relationship for cation and anion doping effects on ferroelectric HfO2 formation
Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) SDM2016-137
Abstract (in Japanese) (See Japanese page) 
(in English) This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO2 ferroelectricity design. In addition, ferroelectric N-doped HfO2 has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).
Keyword (in Japanese) (See Japanese page) 
(in English) ferroelectric HfO2 / dopants / N doping / FeFETs / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 448, SDM2016-137, pp. 29-32, Jan. 2017.
Paper # SDM2016-137 
Date of Issue 2017-01-23 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-137

Conference Information
Committee SDM  
Conference Date 2017-01-30 - 2017-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2017-01-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) General relationship for cation and anion doping effects on ferroelectric HfO2 formation 
Sub Title (in English)  
Keyword(1) ferroelectric HfO2  
Keyword(2) dopants  
Keyword(3) N doping  
Keyword(4) FeFETs  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Xu Lun  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Shibayama Shigehisa  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Izukashi Kazutaka  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Nishimura Tomonori  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Yajima Takeaki  
5th Author's Affiliation University of Tokyo (Univ. of Tokyo)
6th Author's Name Migita Shinji  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Toriumi Akira  
7th Author's Affiliation University of Tokyo (Univ. of Tokyo)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2017-01-30 15:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2016-137 
Volume (vol) vol.116 
Number (no) no.448 
Page pp.29-32 
#Pages 4 
Date of Issue 2017-01-23 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan