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Paper Abstract and Keywords
Presentation 2017-05-25 13:30
Realization of high frequency LLC resonant converter with GaN device
Takehiro Shimizu (Shindengen), Yoshiaki Matsuda (STES), Yousuke Inoue (Shindengen Kumamoto) EE2017-2
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, the miniaturization and thinning of equipment has advanced, demand for miniaturization of the power supply to be mounted has become stronger. In order to miniaturize the power supply, the switching frequency should be increased to the high frequency, but depending on the characteristics of the parts used so far, making it difficult to increase the frequency. However, the diffusion of SiC and GaN called next-generation semiconductor devices and the diffusion of circuit topology with the evolution, the possibility of high frequency (MHz) switching has come to be seen.
This paper shows the contents of considering various possible problems concerning high frequency power supply. Also, the evaluation results of the prototype power supply based on the contents of consideration are reported.
Keyword (in Japanese) (See Japanese page) 
(in English) LLC resonant converter / high frequency / miniaturization / GaN device / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 53, EE2017-2, pp. 7-11, May 2017.
Paper # EE2017-2 
Date of Issue 2017-05-18 (EE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2017-2

Conference Information
Committee EE IEE-HCA  
Conference Date 2017-05-25 - 2017-05-26 
Place (in Japanese) (See Japanese page) 
Place (in English) The Kikai Shinko Kaikan building 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2017-05-EE-HCA 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Realization of high frequency LLC resonant converter with GaN device 
Sub Title (in English)  
Keyword(1) LLC resonant converter  
Keyword(2) high frequency  
Keyword(3) miniaturization  
Keyword(4) GaN device  
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Keyword(6)  
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1st Author's Name Takehiro Shimizu  
1st Author's Affiliation Shindengen Electric Manufacturing Co., Ltd. (Shindengen)
2nd Author's Name Yoshiaki Matsuda  
2nd Author's Affiliation STES Co., Ltd. (STES)
3rd Author's Name Yousuke Inoue  
3rd Author's Affiliation Shindengen Kumamoto Techno-Research Co., Ltd. (Shindengen Kumamoto)
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Speaker Author-1 
Date Time 2017-05-25 13:30:00 
Presentation Time 30 minutes 
Registration for EE 
Paper # EE2017-2 
Volume (vol) vol.117 
Number (no) no.53 
Page pp.7-11 
#Pages 5 
Date of Issue 2017-05-18 (EE) 

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