講演抄録/キーワード |
講演名 |
2017-05-26 10:45
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE ○Kiattiwut Prasertsuk・Tomoyuki Tanikawa・Takeshi Kimura・Shigeyuki Kuboya・Tetsuya Suemitsu・Takashi Matsuoka(Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 エレソ技報アーカイブへのリンク:ED2017-26 CPM2017-12 SDM2017-20 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a potential to realize low ohmic contact resistance on both source and drain due to the electrodes are formed on the top GaN layers, and better carrier confinement due to its natural back barrier. In this work, the N-polar GaN/Al0.32Ga0.68N/GaN heterostructure with a smooth interface has been demonstrated by metalorganic vapor phase epitaxy (MOVPE) grown on a 0.8º off-cut sapphire substrate. To suppress the gate leakage current, a metal-insulator-semiconductor (MIS) gate structure with a 10-nm-thick SiNx insulator layer has been introduced. The gate leakage current has been drastically suppressed by this MIS-HEMT in comparison with a Schottky gate HEMT. As a result, this MIS-HEMT realizes a pinch-off operation with a threshold voltage of -9 V. A prototype N-polar GaN MIS-HEMT also exhibits a promising device characteristic with a maximum current density of over 500 mA/mm. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Gallium Nitride (GaN) / N-polarity / metalorganic vapor phase epitaxy (MOVPE) / metal-insulator-semiconductor (MIS) / high electron mobility transistor (HEMT) / / / |
文献情報 |
信学技報, vol. 117, no. 58, ED2017-26, pp. 59-64, 2017年5月. |
資料番号 |
ED2017-26 |
発行日 |
2017-05-18 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2017-26 CPM2017-12 SDM2017-20 エレソ技報アーカイブへのリンク:ED2017-26 CPM2017-12 SDM2017-20 |