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Paper Abstract and Keywords
Presentation 2017-05-26 10:45
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
Abstract (in Japanese) (See Japanese page) 
(in English) An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a potential to realize low ohmic contact resistance on both source and drain due to the electrodes are formed on the top GaN layers, and better carrier confinement due to its natural back barrier. In this work, the N-polar GaN/Al0.32Ga0.68N/GaN heterostructure with a smooth interface has been demonstrated by metalorganic vapor phase epitaxy (MOVPE) grown on a 0.8º off-cut sapphire substrate. To suppress the gate leakage current, a metal-insulator-semiconductor (MIS) gate structure with a 10-nm-thick SiNx insulator layer has been introduced. The gate leakage current has been drastically suppressed by this MIS-HEMT in comparison with a Schottky gate HEMT. As a result, this MIS-HEMT realizes a pinch-off operation with a threshold voltage of －9 V. A prototype N-polar GaN MIS-HEMT also exhibits a promising device characteristic with a maximum current density of over 500 mA/mm.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Nitride (GaN) / N-polarity / metalorganic vapor phase epitaxy (MOVPE) / metal-insulator-semiconductor (MIS) / high electron mobility transistor (HEMT) / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 58, ED2017-26, pp. 59-64, May 2017.
Paper # ED2017-26 
Date of Issue 2017-05-18 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-26 CPM2017-12 SDM2017-20

Conference Information
Committee SDM ED CPM  
Conference Date 2017-05-25 - 2017-05-26 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2017-05-SDM-ED-CPM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE 
Sub Title (in English)  
Keyword(1) Gallium Nitride (GaN)  
Keyword(2) N-polarity  
Keyword(3) metalorganic vapor phase epitaxy (MOVPE)  
Keyword(4) metal-insulator-semiconductor (MIS)  
Keyword(5) high electron mobility transistor (HEMT)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kiattiwut Prasertsuk  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tomoyuki Tanikawa  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Takeshi Kimura  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Shigeyuki Kuboya  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tetsuya Suemitsu  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Takashi Matsuoka  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2017-05-26 10:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-26, CPM2017-12, SDM2017-20 
Volume (vol) vol.117 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.59-64 
#Pages 6 
Date of Issue 2017-05-18 (ED, CPM, SDM) 

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