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Paper Abstract and Keywords
Presentation 2017-05-26 15:00
Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure
Atsushi Matsumoto, Kouichi Akahane, Toshimasa Umezawa, Naokatsu Yamamoto (NICT) LQE2017-19
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we fabricated 1.55-μm band p-doped broad-area (BA) and ridge structured 30-layer stacked quantum-dot (QD) laser diodes (LDs) grown on an InP(311)B substrate via a delta-doping method employing a strain compensation technique. We doped Be atoms to a depth of 5 nm from the bottom of each QD layer. The concentration of Be atoms doped in the InGaAlAs spacer layer was 1 x 1018 cm-3. We observed that the fabricated BA-LDs and ridge QD-LD had extremely stable temperature characteristics, and a characteristic temperature T0 of more than 2156 K and 1926 K was obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor quantum dot / p-doped / thermal stability / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 61, LQE2017-19, pp. 79-84, May 2017.
Paper # LQE2017-19 
Date of Issue 2017-05-18 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2017-19

Conference Information
Committee LQE LSJ  
Conference Date 2017-05-25 - 2017-05-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2017-05-LQE-LSJ 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Extreme Thermal Stability of 1550 nm Band Highly Stacked QD-LDs with p-Doped Structure 
Sub Title (in English)  
Keyword(1) semiconductor quantum dot  
Keyword(2) p-doped  
Keyword(3) thermal stability  
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1st Author's Name Atsushi Matsumoto  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Kouichi Akahane  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Toshimasa Umezawa  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Naokatsu Yamamoto  
4th Author's Affiliation National Institute of Information and Communications Technology (NICT)
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Speaker Author-1 
Date Time 2017-05-26 15:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2017-19 
Volume (vol) vol.117 
Number (no) no.61 
Page pp.79-84 
#Pages 6 
Date of Issue 2017-05-18 (LQE) 

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