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| Presentation | 2017-06-20 13:00 [Invited Lecture] Scintillators and Ga2O3 Semiconductors Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST)  SDM2017-21 Link to ES Tech. Rep. Archives: SDM2017-21 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | With the recent advancement of radiation-detection technologies, the demands of higher performances of scintillators are considerably increasing. Scintillators are a class of phosphors which shows luminescence upon incident of ionizing radiations; therefore, one can use scintillators for radiation detections with a use of photodetectors together. Fundamental properties of scintillators include high light yield and short decay time. As represented in NaI:Tl and YAG:Ce as used in practice, scintillator materials in general consist of inorganic insulator as a host matrix and transitional metals or rare-earth ions as luminescent centre. Therefore, the luminescent properties strongly depends on the radiative electronic transitions of dopants and the ones showing the shortest lifetime are on the order of several tens nanoseconds. In contrast, some semiconductors show potentially higher scintillation light yield and even shorter lifetimes. For the latter reasons, semiconductor materials are of our great interest for scintillator applications, and scintillation properties of Ga2O3 in addition to general aspects of scintillators are discussed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Scintillator / Semiconductor / Ga2O3 / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 101, SDM2017-21, pp. 1-4, June 2017. | |
| Paper # | SDM2017-21 | |
| Date of Issue | 2017-06-13 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-21 Link to ES Tech. Rep. Archives: SDM2017-21 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-06-20 - 2017-06-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Scintillators and Ga2O3 Semiconductors |
| Sub Title (in English) | |
| Keyword(1) | Scintillator |
| Keyword(2) | Semiconductor |
| Keyword(3) | Ga2O3 |
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| 1st Author's Name | Go Okada |
| 1st Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 2nd Author's Name | Yuki Usui |
| 2nd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 3rd Author's Name | Naoki Kawano |
| 3rd Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 4th Author's Name | Noriaki Kawaguchi |
| 4th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
| 5th Author's Name | Takayuki Yanagida |
| 5th Author's Affiliation | Nara Institute of Science and Technology (NAIST) |
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| Speaker | Author-1 |
| Date Time | 2017-06-20 13:00:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2017-21 |
| Volume (vol) | vol.117 |
| Number (no) | no.101 |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2017-06-13 (SDM) |
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