| Paper Abstract and Keywords |
| Presentation |
2017-08-02 10:50
[Invited Talk]
Capacitor-less neuron circuits using metal-insulator transition devices Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2017-44 ICD2017-32 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circuit which overcomes the fundamental challenges of downscaling capacitors. The Joule-heat-induced metal-insulator transition enables heat integral in analogy with charge integral in capacitors, leading to the time averaging of the input voltage pulses in the artificial neuron circuits. Thus, the phase transition materials with time averaging function, including VO2, will replace capacitors and help integrate the neuromorphic circuits. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
VO2 / Metal-insulator transition / Neuron / Joule heat / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 117, no. 166, SDM2017-44, pp. 107-108, July 2017. |
| Paper # |
SDM2017-44 |
| Date of Issue |
2017-07-24 (SDM, ICD) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
SDM2017-44 ICD2017-32 |
| Conference Information |
| Committee |
SDM ICD ITE-IST |
| Conference Date |
2017-07-31 - 2017-08-02 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Hokkaido-Univ. Multimedia Education Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2017-07-SDM-ICD-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Capacitor-less neuron circuits using metal-insulator transition devices |
| Sub Title (in English) |
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| Keyword(1) |
VO2 |
| Keyword(2) |
Metal-insulator transition |
| Keyword(3) |
Neuron |
| Keyword(4) |
Joule heat |
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| 1st Author's Name |
Takeaki Yajima |
| 1st Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name |
Tomonori Nishimura |
| 2nd Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name |
Akira Toriumi |
| 3rd Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
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| Speaker |
Author-1 |
| Date Time |
2017-08-02 10:50:00 |
| Presentation Time |
45 minutes |
| Registration for |
SDM |
| Paper # |
SDM2017-44, ICD2017-32 |
| Volume (vol) |
vol.117 |
| Number (no) |
no.166(SDM), no.167(ICD) |
| Page |
pp.107-108 |
| #Pages |
2 |
| Date of Issue |
2017-07-24 (SDM, ICD) |