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Paper Abstract and Keywords
Presentation 2017-08-09 16:15
Evaluation of ZnO layer of PbS QD/Silicon infrared Photodiode for LSI
Akio Higo, Haibin Wang, Takaya Kubo, Naoto Usami, Yuki Okamoto, Kentaro Yamada, Hiroshi Segawa, Masakazu Sugiyama, Yoshio Mita (Univ. of Tokyo) ED2017-30
Abstract (in Japanese) (See Japanese page) 
(in English) In secure life electronics applications, cost effective and wide range infrared photodiode with large scale integration (LSI) are required, but in general, silicon bulk material has no sensitivity in infrared. For realizing the beyond the silicon bandgap, we proposed and fabricated a p-n junction by n-si, n-ZnO and p-PbS colloidal quantum dots for absorption in the infrared region. In this paper, the properties of the ZnO layer were evaluated.
Keyword (in Japanese) (See Japanese page) 
(in English) colloidal quantum dot / PbS / ZnO / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 172, ED2017-30, pp. 23-24, Aug. 2017.
Paper # ED2017-30 
Date of Issue 2017-08-02 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-30

Conference Information
Committee ED  
Conference Date 2017-08-09 - 2017-08-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sensor, MEMS, general 
Paper Information
Registration To ED 
Conference Code 2017-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of ZnO layer of PbS QD/Silicon infrared Photodiode for LSI 
Sub Title (in English)  
Keyword(1) colloidal quantum dot  
Keyword(2) PbS  
Keyword(3) ZnO  
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1st Author's Name Akio Higo  
1st Author's Affiliation The University of Tokyo (Univ. of Tokyo)
2nd Author's Name Haibin Wang  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Takaya Kubo  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Naoto Usami  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Yuki Okamoto  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
6th Author's Name Kentaro Yamada  
6th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
7th Author's Name Hiroshi Segawa  
7th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
8th Author's Name Masakazu Sugiyama  
8th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
9th Author's Name Yoshio Mita  
9th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2017-08-09 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-30 
Volume (vol) vol.117 
Number (no) no.172 
Page pp.23-24 
#Pages 2 
Date of Issue 2017-08-02 (ED) 

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