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Paper Abstract and Keywords
Presentation 2017-10-20 11:05
5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer
Koji Yamanaka, Kazuhiro Iyomasa, Masatake Hangai, Hiromitsu Utsumi, Jun Nishihara, Yukihiro Homma (Mitsubishi Electric), Kenji Sakaki (J-SS) EMCJ2017-47 MW2017-99 EST2017-62
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a state-of-the-art high power and high efficiency GaN HEMT amplifier, which is to be used in 5.8GHz microwave power transfer systems, is presented. A 0.15m gate length GaN HEMT, which is usually used for millimeter wave applications, is used to realize ultimate high efficiency. With up to 3rd order harmonic termination, a champion value of 77.7% PAE with 8.4W output power is obtained. Meanwhile, average output power of 11.7W with 4.7% variation and average PAE of 68% with 0.6 pts variation is obtained with more reliable GaN HEMT.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / High-voltage techniques / MODFET power amplifiers / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 244, MW2017-99, pp. 117-122, Oct. 2017.
Paper # MW2017-99 
Date of Issue 2017-10-12 (EMCJ, MW, EST) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMCJ2017-47 MW2017-99 EST2017-62

Conference Information
Committee MW EMCJ EST  
Conference Date 2017-10-19 - 2017-10-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Yupopo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electromagnetic simulation ，EMC, Microwave technologies 
Paper Information
Registration To MW 
Conference Code 2017-10-MW-EMCJ-EST-EMC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) High-voltage techniques  
Keyword(3) MODFET power amplifiers  
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1st Author's Name Koji Yamanaka  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Kazuhiro Iyomasa  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Masatake Hangai  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Hiromitsu Utsumi  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Jun Nishihara  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
6th Author's Name Yukihiro Homma  
6th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
7th Author's Name Kenji Sakaki  
7th Author's Affiliation Japan Spase Systems (J-SS)
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Speaker Author-1 
Date Time 2017-10-20 11:05:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # EMCJ2017-47, MW2017-99, EST2017-62 
Volume (vol) vol.117 
Number (no) no.243(EMCJ), no.244(MW), no.245(EST) 
Page pp.117-122 
#Pages 6 
Date of Issue 2017-10-12 (EMCJ, MW, EST) 

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