Paper Abstract and Keywords |
Presentation |
2017-10-20 11:05
5.8GHz High Efficiency GaN Amplifier for Practical Use of Microwave Power Transfer Koji Yamanaka, Kazuhiro Iyomasa, Masatake Hangai, Hiromitsu Utsumi, Jun Nishihara, Yukihiro Homma (Mitsubishi Electric), Kenji Sakaki (J-SS) EMCJ2017-47 MW2017-99 EST2017-62 Link to ES Tech. Rep. Archives: MW2017-99 EST2017-62 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, a state-of-the-art high power and high efficiency GaN HEMT amplifier, which is to be used in 5.8GHz microwave power transfer systems, is presented. A 0.15m gate length GaN HEMT, which is usually used for millimeter wave applications, is used to realize ultimate high efficiency. With up to 3rd order harmonic termination, a champion value of 77.7% PAE with 8.4W output power is obtained. Meanwhile, average output power of 11.7W with 4.7% variation and average PAE of 68% with 0.6 pts variation is obtained with more reliable GaN HEMT. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN HEMT / High-voltage techniques / MODFET power amplifiers / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 244, MW2017-99, pp. 117-122, Oct. 2017. |
Paper # |
MW2017-99 |
Date of Issue |
2017-10-12 (EMCJ, MW, EST) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EMCJ2017-47 MW2017-99 EST2017-62 Link to ES Tech. Rep. Archives: MW2017-99 EST2017-62 |
|