Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-10-25 16:30
[Invited Talk] A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-54
Abstract (in Japanese) (See Japanese page) 
(in English) The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneath materials and deposition temperature. In this paper, the pentacene film deposited at 100oC on a HfO2 bottom-gate insulator, which is one of the most famous high-k materials, was investigated to reduce the operation voltage of OFETs. It was found that the grain size of a pentacene film was increased to 10 um, and it was larger than that on SiO2. Furthermore, a nitrogen-doped LaB6 interfacial layer deposited on an SiO2 gate insulator also increased the grain size of the pentacene film, and the device characteristics of the OFET improved.
Keyword (in Japanese) (See Japanese page) 
(in English) pentacene / HfO2 / nitrogen-doped LaB6 / interface control / high temperature deposition / surface morphology / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 260, SDM2017-54, pp. 25-30, Oct. 2017.
Paper # SDM2017-54 
Date of Issue 2017-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-54

Conference Information
Committee SDM  
Conference Date 2017-10-25 - 2017-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2017-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator 
Sub Title (in English)  
Keyword(1) pentacene  
Keyword(2) HfO2  
Keyword(3) nitrogen-doped LaB6  
Keyword(4) interface control  
Keyword(5) high temperature deposition  
Keyword(6) surface morphology  
Keyword(7)  
Keyword(8)  
1st Author's Name Yasutaka Maeda  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Yeyuan Liu  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Mizuha Hiroki  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Shun-ichiro Ohmi  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2017-10-25 16:30:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2017-54 
Volume (vol) vol.117 
Number (no) no.260 
Page pp.25-30 
#Pages 6 
Date of Issue 2017-10-18 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan