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Paper Abstract and Keywords
Presentation 2017-11-09 13:05
Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET
Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL) SDM2017-63
Abstract (in Japanese) (See Japanese page) 
(in English) This paper proposes a simple and efficient method to improve hot carrier (HC) immunity of p-channel LDMOSFET without degrading typical figure of merits uch as breakdown voltage $BV$ and specific on-resistance $R_{sp}$.
The superiority of a novel STI-based p-channel LDMOSFET with a hot electron cooling (HEC) layer against the conventional method to improve HC immunity (i.e. extending the p- drift length) is confirmed by TCAD simulation.
Keyword (in Japanese) (See Japanese page) 
(in English) p-LDMOSFET / hot carrier stress / gate oxide breakdown / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 290, SDM2017-63, pp. 11-14, Nov. 2017.
Paper # SDM2017-63 
Date of Issue 2017-11-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-63

Conference Information
Committee SDM  
Conference Date 2017-11-09 - 2017-11-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2017-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET 
Sub Title (in English)  
Keyword(1) p-LDMOSFET  
Keyword(2) hot carrier stress  
Keyword(3) gate oxide breakdown  
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1st Author's Name Atsushi Sakai  
1st Author's Affiliation Renesas Electronics (REL)
2nd Author's Name Katsumi Eikyu  
2nd Author's Affiliation Renesas Electronics (REL)
3rd Author's Name Fujii Hiroki  
3rd Author's Affiliation Renesas Semiconductor Manufacturing (RSMC)
4th Author's Name Takahiro Mori  
4th Author's Affiliation Renesas Semiconductor Manufacturing (RSMC)
5th Author's Name Yutaka Akiyama  
5th Author's Affiliation Renesas Electronics (REL)
6th Author's Name Yasuo Yamaguchi  
6th Author's Affiliation Renesas Electronics (REL)
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Speaker Author-1 
Date Time 2017-11-09 13:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2017-63 
Volume (vol) vol.117 
Number (no) no.290 
Page pp.11-14 
#Pages 4 
Date of Issue 2017-11-02 (SDM) 

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