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Paper Abstract and Keywords
Presentation 2017-11-21 11:20
Relation between parasitic coupling around power MOSFET and excitation of common-mode voltage
Tohlu Matsushima, Takao Kuroyanagi, Takashi Hisakado, Osami Wada (Kyoto Univ.) EMCJ2017-61
Abstract (in Japanese) (See Japanese page) 
(in English) In this report, it is formalized that common-mode voltages are excited by switching current flows on parasitic capacitor between a heat spreader of a MOSFET and a heat sink.
In order to control a coupling path of the common mode current, using a MOSFET whose source electrode is connected to a heat spreader for a lower switch of a half-bridge circuit reduces common-mode voltage up to about 30 MHz.
In addition, satisfying the impedance balance condition between the parasitic capacitance around the MOSFET and the parasitic inductance on the power and ground lines can also reduce common-mode voltage above 30 MHz.
According to SPICE simulation, changing the position of parasitic capacitance obtains 15-dB reduction of common-mode voltage below 100~MHz.
Keyword (in Japanese) (See Japanese page) 
(in English) common mode / parasitic coupling / impedance balance / power MOSFET / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 317, EMCJ2017-61, pp. 13-18, Nov. 2017.
Paper # EMCJ2017-61 
Date of Issue 2017-11-14 (EMCJ) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee WPT EMCJ  
Conference Date 2017-11-21 - 2017-11-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wireless Power Transmission, Electronic Packaging, EMC 
Paper Information
Registration To EMCJ 
Conference Code 2017-11-WPT-EMCJ 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Relation between parasitic coupling around power MOSFET and excitation of common-mode voltage 
Sub Title (in English)  
Keyword(1) common mode  
Keyword(2) parasitic coupling  
Keyword(3) impedance balance  
Keyword(4) power MOSFET  
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1st Author's Name Tohlu Matsushima  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Takao Kuroyanagi  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Takashi Hisakado  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Osami Wada  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2017-11-21 11:20:00 
Presentation Time 25 minutes 
Registration for EMCJ 
Paper # EMCJ2017-61 
Volume (vol) vol.117 
Number (no) no.317 
Page pp.13-18 
#Pages
Date of Issue 2017-11-14 (EMCJ) 


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