Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-11-30 16:40
Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates -- Metal workfunction dependence of Schottky barrier height --
Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.) ED2017-56 CPM2017-99 LQE2017-69
Abstract (in Japanese) (See Japanese page) 
(in English) We report electrical characteristics of Schottky contacts with 9 different metals (Ag, Ti, Cr, W, Mo, Au, Pd, Ni, Pt) formed on clean m-plane surfaces by cleaving free-standing GaN substrates, comparing with the contacts on Ga-polar c-plane n-GaN surfaces grown on GaN substrates. The n-values in the forward current-voltage (I-V) characteristics are as good as 1.02 to 1.05 for the m-plane and 1.02 to 1.09 for the c-plane samples. We found that the reverse I-V curves of the both samples can be explained with the thermionic field emission theory, and the m-plane contacts have a metal work-function dependence of Schottky barrier heights as large as that of the Ga-polar c-plane n-GaN contacts. These results tell us that the cleaving method can provide the clean m-plane surfaces where Fermi-level pinning is as small as those of the c-plane.
Keyword (in Japanese) (See Japanese page) 
(in English) m-plane GaN / cleaving / metal workfunction / Schottky contact / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 331, ED2017-56, pp. 33-38, Nov. 2017.
Paper # ED2017-56 
Date of Issue 2017-11-23 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-56 CPM2017-99 LQE2017-69

Conference Information
Committee LQE CPM ED  
Conference Date 2017-11-30 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2017-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates 
Sub Title (in English) Metal workfunction dependence of Schottky barrier height 
Keyword(1) m-plane GaN  
Keyword(2) cleaving  
Keyword(3) metal workfunction  
Keyword(4) Schottky contact  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenji Shiojima  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Hiroyoshi Imadate  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Tomoyoshi Mishima  
3rd Author's Affiliation Hosei University (Hosei Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2017-11-30 16:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-56, CPM2017-99, LQE2017-69 
Volume (vol) vol.117 
Number (no) no.331(ED), no.332(CPM), no.333(LQE) 
Page pp.33-38 
#Pages 6 
Date of Issue 2017-11-23 (ED, CPM, LQE) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan