| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2017-11-30 15:50 Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.)  ED2017-54 CPM2017-97 LQE2017-67 Link to ES Tech. Rep. Archives: ED2017-54 CPM2017-97 LQE2017-67 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and related materials. The photo-electrochemical oxidation was selectively conducted on the opened area of the SiO2-masked GaN surface. The Ga-oxide films were easily removed by the alkaline-treatments, where lower-damaged surface was obtained as compared with the surface obtained after the conventional dry-etching. Such low-damage etching process was very useful to fabricate the recessed-gate structure in AlGaN/GaN HEMTs. The threshold-voltage of HEMTs was precisely controlled with the etching depth with accuracy in a nanometer-range. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN/GaN HEMT / electrochemical oxidation / wet etching / recessed-gate / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 331, ED2017-54, pp. 23-26, Nov. 2017. | |
| Paper # | ED2017-54 | |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-54 CPM2017-97 LQE2017-67 Link to ES Tech. Rep. Archives: ED2017-54 CPM2017-97 LQE2017-67 |
|
| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2017-11-30 - 2017-12-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN/GaN HEMT |
| Keyword(3) | electrochemical oxidation |
| Keyword(4) | wet etching |
| Keyword(5) | recessed-gate |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Keisuke Uemura |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Satoru Matsumoto |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Masachika Toguchi |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Keisuke Ito |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 5th Author's Name | Taketomo Sato |
| 5th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2017-11-30 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2017-54, CPM2017-97, LQE2017-67 |
| Volume (vol) | vol.117 |
| Number (no) | no.331(ED), no.332(CPM), no.333(LQE) |
| Page | pp.23-26 |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
[Return to Top Page]