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Paper Abstract and Keywords
Presentation 2017-11-30 14:00
Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs
Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.) ED2017-50 CPM2017-93 LQE2017-63
Abstract (in Japanese) (See Japanese page) 
(in English) Current-voltage characteristics under photo-excitation in nitride-based LEDs have been measured to investigate the electronic structures and carrier dynamics in active layers of the devices. It is found that photocurrent spectroscopy reflects the joint density of states more directly than photovoltaic spectroscopy. In addition, the experimental results have been successfully reproduced by a simple rate-equation model considering carrier-leakage induced photo-current and inside recombination processes in the LEDs under reverse-bias condition.
Keyword (in Japanese) (See Japanese page) 
(in English) LED / current - voltage characteristics / photocurrent / photovoltaic effects / III-nitride / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 333, LQE2017-63, pp. 7-10, Nov. 2017.
Paper # LQE2017-63 
Date of Issue 2017-11-23 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-50 CPM2017-93 LQE2017-63

Conference Information
Committee LQE CPM ED  
Conference Date 2017-11-30 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2017-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs 
Sub Title (in English)  
Keyword(1) LED  
Keyword(2) current - voltage characteristics  
Keyword(3) photocurrent  
Keyword(4) photovoltaic effects  
Keyword(5) III-nitride  
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Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Ota  
1st Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
2nd Author's Name Shigeta Sakai  
2nd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
3rd Author's Name Atsushi A. Yamaguchi  
3rd Author's Affiliation Kanazawa Institute of Technology (Kanazawa Inst. of Tech.)
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Speaker Author-1 
Date Time 2017-11-30 14:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2017-50, CPM2017-93, LQE2017-63 
Volume (vol) vol.117 
Number (no) no.331(ED), no.332(CPM), no.333(LQE) 
Page pp.7-10 
#Pages 4 
Date of Issue 2017-11-23 (ED, CPM, LQE) 

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