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Paper Abstract and Keywords
Presentation 2017-12-01 12:55
Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Reference Info. IEICE Tech. Rep., vol. 117, no. 331, ED2017-62, pp. 65-68, Nov. 2017.
Paper # ED2017-62 
Date of Issue 2017-11-23 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-62 CPM2017-105 LQE2017-75

Conference Information
Committee LQE CPM ED  
Conference Date 2017-11-30 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2017-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of PBTI reliability in GaN-MOSFETs 
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1st Author's Name Yosuke Kajiwara  
1st Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
2nd Author's Name Toshiya Yonehara  
2nd Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
3rd Author's Name Daimotsu Kato  
3rd Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
4th Author's Name Kenjiro Uesugi  
4th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
5th Author's Name Aya Shindome  
5th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
6th Author's Name Masahiko Kuraguchi  
6th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
7th Author's Name Akira Mukai  
7th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
8th Author's Name Hiroshi Ono  
8th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
9th Author's Name Miki Yumoto  
9th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
10th Author's Name Akira Yoshioka  
10th Author's Affiliation Advanced Discrete Development Center, Toshiba Device & Storage Corporation (Toshiba)
11th Author's Name Shinya Nunoue  
11th Author's Affiliation Corporate R&D center, Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2017-12-01 12:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-62, CPM2017-105, LQE2017-75 
Volume (vol) vol.117 
Number (no) no.331(ED), no.332(CPM), no.333(LQE) 
Page pp.65-68 
#Pages 4 
Date of Issue 2017-11-23 (ED, CPM, LQE) 

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