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Paper Abstract and Keywords
Presentation 2017-12-01 14:45
Homoepitaxial growth on sputtered AlN templates by MOVPE
Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2017-66 CPM2017-109 LQE2017-79
Abstract (in Japanese) (See Japanese page) 
(in English) AlN is a wide band gap semiconductor and has attracted attention as a material for deep UV light device because its thermal and chemical properties are stable. A high-quality AlN film is necessary to realize a highly efficient device. However, high-density threading dislocations are generated from lattice mismatch and difference of thermal expansion coefficient between AlN and sapphire substrate. A technique combining a sputtering and thermal annealing against this problem has attracted attention. However, since AlN film deposited by the sputtering contains a lot of impurities, there is possibility that subsequent epitaxial layers will be adversely affected. Therefore, we aimed to realize high-quality and high-purity AlN template by combining MOVPE with less impurity density than sputtering. The crystallinity of AlN fabricated by this process was equivalent to that of the conventional fabrication methods and the impurity density was lower than that of the conventional fabrication methods.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / Sapphire / Sputtering / MOVPE / Annealing / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 333, LQE2017-79, pp. 83-86, Nov. 2017.
Paper # LQE2017-79 
Date of Issue 2017-11-23 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-66 CPM2017-109 LQE2017-79

Conference Information
Committee LQE CPM ED  
Conference Date 2017-11-30 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2017-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Homoepitaxial growth on sputtered AlN templates by MOVPE 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) Sapphire  
Keyword(3) Sputtering  
Keyword(4) MOVPE  
Keyword(5) Annealing  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryo Yoshizawa  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Yusuke Hayashi  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Hideto Miyake  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Kazumasa Hiramatsu  
4th Author's Affiliation Mie University (Mie Univ.)
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Speaker Author-1 
Date Time 2017-12-01 14:45:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2017-66, CPM2017-109, LQE2017-79 
Volume (vol) vol.117 
Number (no) no.331(ED), no.332(CPM), no.333(LQE) 
Page pp.83-86 
#Pages 4 
Date of Issue 2017-11-23 (ED, CPM, LQE) 

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