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Paper Abstract and Keywords
Presentation 2017-12-07 10:50
Fabrication of vertical PN junction phase shifter for Si optical modulator based on strip loaded waveguide
Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano (AIST), Kazuto Itoh, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech), Koji Yamada (AIST) OPE2017-92
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricate a silicon optical phase shifter based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on a silicon on insulator (SOI) platform by using a complementary metal-oxide semiconductor (CMOS) compatible process without half etching of the SOI layer. A vertical p-n junction is controllably constructed with ion implantation in a flat etchless SOI layer. The waveguide structure based on a thin a-Si:H strip line is formed by applying a controllable and uniform deposition process and having an etching stop layer. In detail evaluation of the fabricated device, the precisely formed core shape is confirmed by scanning transmission electron microscopy (STEM) observation and the uniformity of carrier profile is analyzed by secondary ion mass spectrometry (SIMS) and a scanning capacitance microscope (SCM). As modulation performances, the modulator provides 0.7- to 2-Vcm modulation efficiency and 28-Gbps high-speed operation.
Keyword (in Japanese) (See Japanese page) 
(in English) Modulator / Vertical p-n junction / Strip-loaded waveguide / Silicon photonics / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 339, OPE2017-92, pp. 13-18, Dec. 2017.
Paper # OPE2017-92 
Date of Issue 2017-11-30 (OPE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OPE  
Conference Date 2017-12-07 - 2017-12-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2017-12-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of vertical PN junction phase shifter for Si optical modulator based on strip loaded waveguide 
Sub Title (in English)  
Keyword(1) Modulator  
Keyword(2) Vertical p-n junction  
Keyword(3) Strip-loaded waveguide  
Keyword(4) Silicon photonics  
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Keyword(6)  
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1st Author's Name Yuriko Maegami  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Guangwei Cong  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Morifumi Ohno  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Makoto Okano  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Kazuto Itoh  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Nobuhiko Nishiyama  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
7th Author's Name Shigehisa Arai  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
8th Author's Name Koji Yamada  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2017-12-07 10:50:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OPE2017-92 
Volume (vol) vol.117 
Number (no) no.339 
Page pp.13-18 
#Pages 6 
Date of Issue 2017-11-30 (OPE) 

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