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| Presentation | 2017-12-19 10:30 4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches. Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjou (Univ. of Electro-Communications)  MW2017-142 Link to ES Tech. Rep. Archives: MW2017-142 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For the next generation wireless communication systems, 4.5-/4.9-GHz band tunable GaN HEMT high efficiency power amplifier was designed and evaluated. In order to minimize an influence of the insertion loss caused by switching elements, an additional line is arranged in parallel with the open-ended stub for the second harmonic treatment. The fabricated GaN HEMT amplifier exhibited a maximum power-added efficiency of 57% and 66%, a maximum drain efficiency of 62% and 70%, and a saturation output power of 38 dBm at 4.6 and 5.0 GHz, respectively, for each switched condition. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | power amplifier / high efficiency / tunable / GaN HEMT / PIN diode / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 366, MW2017-142, pp. 1-6, Dec. 2017. | |
| Paper # | MW2017-142 | |
| Date of Issue | 2017-12-12 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2017-142 Link to ES Tech. Rep. Archives: MW2017-142 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2017-12-19 - 2017-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2017-12-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches. |
| Sub Title (in English) | |
| Keyword(1) | power amplifier |
| Keyword(2) | high efficiency |
| Keyword(3) | tunable |
| Keyword(4) | GaN HEMT |
| Keyword(5) | PIN diode |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuki Mashimo |
| 1st Author's Affiliation | The University of Electro-Communications (Univ. of Electro-Communications) |
| 2nd Author's Name | Ryo Ishikawa |
| 2nd Author's Affiliation | The University of Electro-Communications (Univ. of Electro-Communications) |
| 3rd Author's Name | Kazuhiko Honjou |
| 3rd Author's Affiliation | The University of Electro-Communications (Univ. of Electro-Communications) |
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| Speaker | Author-1 |
| Date Time | 2017-12-19 10:30:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2017-142 |
| Volume (vol) | vol.117 |
| Number (no) | no.366 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2017-12-12 (MW) |
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