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Paper Abstract and Keywords
Presentation 2017-12-19 10:30
4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches.
Kazuki Mashimo, Ryo Ishikawa, Kazuhiko Honjou (Univ. of Electro-Communications) MW2017-142
Abstract (in Japanese) (See Japanese page) 
(in English) For the next generation wireless communication systems, 4.5-/4.9-GHz band tunable GaN HEMT high efficiency power amplifier was designed and evaluated. In order to minimize an influence of the insertion loss caused by switching elements, an additional line is arranged in parallel with the open-ended stub for the second harmonic treatment. The fabricated GaN HEMT amplifier exhibited a maximum power-added efficiency of 57% and 66%, a maximum drain efficiency of 62% and 70%, and a saturation output power of 38 dBm at 4.6 and 5.0 GHz, respectively, for each switched condition.
Keyword (in Japanese) (See Japanese page) 
(in English) power amplifier / high efficiency / tunable / GaN HEMT / PIN diode / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 366, MW2017-142, pp. 1-6, Dec. 2017.
Paper # MW2017-142 
Date of Issue 2017-12-12 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MW2017-142

Conference Information
Committee MW  
Conference Date 2017-12-19 - 2017-12-20 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MW 
Conference Code 2017-12-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 4.5-/4.9-GHz-Band Tunable GaN HEMT High Efficiency Power Amplifier with PIN Diode Switches. 
Sub Title (in English)  
Keyword(1) power amplifier  
Keyword(2) high efficiency  
Keyword(3) tunable  
Keyword(4) GaN HEMT  
Keyword(5) PIN diode  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazuki Mashimo  
1st Author's Affiliation The University of Electro-Communications (Univ. of Electro-Communications)
2nd Author's Name Ryo Ishikawa  
2nd Author's Affiliation The University of Electro-Communications (Univ. of Electro-Communications)
3rd Author's Name Kazuhiko Honjou  
3rd Author's Affiliation The University of Electro-Communications (Univ. of Electro-Communications)
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Speaker Author-1 
Date Time 2017-12-19 10:30:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2017-142 
Volume (vol) vol.117 
Number (no) no.366 
Page pp.1-6 
#Pages 6 
Date of Issue 2017-12-12 (MW) 

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