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Paper Abstract and Keywords
Presentation 2017-12-19 09:40
Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs
Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.) ED2017-82
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics at 300 and 16 K. The drain-source current Ids of the InGaAs/InAs/InGaAs channel HEMT is more than twice that of the InGaAs channel HEMT. The cutoff frequency fT value increases by about 20 to 35% with cooling from 300 to 16 K for both HEMTs. On the other hand, the increase in the maximum oscillation frequency fmax by cooling for the InGaAs/InAs/InGaAs channel HEMT is much greater than that for the InGaAs channel HEMT. The increase in fmax for the InGaAs channel HEMT is about 30 to 40%. On the other hand, the increase for the InGaAs/InAs/InGaAs channel HEMT is over 70%, which results from the suppression of increasing drain conductance gd. The suppression of gd is due to the more confinement of electrons in the InAs layer by cooling.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs/InAs/InGaAs / Cryogenic characteristics / Drain-source current / Cutoff frequency / Maximum oscillation frequency / Drain conductance / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 364, ED2017-82, pp. 37-40, Dec. 2017.
Paper # ED2017-82 
Date of Issue 2017-12-11 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED THz  
Conference Date 2017-12-18 - 2017-12-19 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2017-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs 
Sub Title (in English)  
Keyword(1) InGaAs/InAs/InGaAs  
Keyword(2) Cryogenic characteristics  
Keyword(3) Drain-source current  
Keyword(4) Cutoff frequency  
Keyword(5) Maximum oscillation frequency  
Keyword(6) Drain conductance  
Keyword(7)  
Keyword(8)  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Akifumi Kasamatsu  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Takashi Mimura  
4th Author's Affiliation National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.)
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Speaker Author-1 
Date Time 2017-12-19 09:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-82 
Volume (vol) vol.117 
Number (no) no.364 
Page pp.37-40 
#Pages 4 
Date of Issue 2017-12-11 (ED) 

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