Paper Abstract and Keywords |
Presentation |
2017-12-19 15:10
Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91 Link to ES Tech. Rep. Archives: ED2017-91 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-GFET). We fabricated the device made of high-quality epitaxial graphene (EG) grown by thermal decomposition of a SiC substrate. And a SiN gate insulator was deposited more thickly than before to prevent the gate leakage current. We measured its I-V characteristics for both gates at different temperatures. We observed improved transconductance and carrier momentum relaxation time at lower temperatures reflecting the improved carrier transport property. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Graphene / Terahertz / Transistor / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 364, ED2017-91, pp. 73-76, Dec. 2017. |
Paper # |
ED2017-91 |
Date of Issue |
2017-12-11 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2017-91 Link to ES Tech. Rep. Archives: ED2017-91 |
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