Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-12-19 15:10
Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor
Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91
Abstract (in Japanese) (See Japanese page) 
(in English) We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-GFET). We fabricated the device made of high-quality epitaxial graphene (EG) grown by thermal decomposition of a SiC substrate. And a SiN gate insulator was deposited more thickly than before to prevent the gate leakage current. We measured its I-V characteristics for both gates at different temperatures. We observed improved transconductance and carrier momentum relaxation time at lower temperatures reflecting the improved carrier transport property.
Keyword (in Japanese) (See Japanese page) 
(in English) Graphene / Terahertz / Transistor / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 364, ED2017-91, pp. 73-76, Dec. 2017.
Paper # ED2017-91 
Date of Issue 2017-12-11 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-91

Conference Information
Committee ED THz  
Conference Date 2017-12-18 - 2017-12-19 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2017-12-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor 
Sub Title (in English)  
Keyword(1) Graphene  
Keyword(2) Terahertz  
Keyword(3) Transistor  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenta Sugawara  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Takayuki Watanabe  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Deepika Yadav  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Takahiro Komiyama  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Yoshiki Fuse  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Maxim Ryzhii  
6th Author's Affiliation Aizu University (Aizu Univ.)
7th Author's Name Victor Ryzhii  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Hirokazu Fukidome  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
9th Author's Name Maki Suemitsu  
9th Author's Affiliation Tohoku University (Tohoku Univ.)
10th Author's Name Taiichi Otsuji  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2017-12-19 15:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-91 
Volume (vol) vol.117 
Number (no) no.364 
Page pp.73-76 
#Pages 4 
Date of Issue 2017-12-11 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan