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Paper Abstract and Keywords
Presentation 2018-01-29 11:45
Investigation of a POL for mobile equipment using GaN-HEMT
Atsushi Saito, Syohei Miyano, Seiya Abe, Satoshi Matumoto (KIT) EE2017-47
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, miniaturization of power supply is required along with miniaturization and high performance of electric and communication equipment. High frequency switching is effective for miniaturization of the power supply. This paper clarifies that the problems of the fabricated prototype synchronous back converter using GaN-HEMT and the fabricated Si based driver IC are long wire bonding and dead time generator using external capacitor. In addition, we propose strategies for solving the problems. As a result, efficiency of POL at 10 MHz and 30MHz were more than 90 % and 80 %, respectively when Li-ion battery is used as a power source.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Gate Driver / High frequency Switchng / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 424, EE2017-47, pp. 29-34, Jan. 2018.
Paper # EE2017-47 
Date of Issue 2018-01-22 (EE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EE2017-47

Conference Information
Committee EE  
Conference Date 2018-01-29 - 2018-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Satellite Campus Oita 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EE 
Conference Code 2018-01-EE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of a POL for mobile equipment using GaN-HEMT 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Gate Driver  
Keyword(3) High frequency Switchng  
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1st Author's Name Atsushi Saito  
1st Author's Affiliation Kyushu Institute of Technology (KIT)
2nd Author's Name Syohei Miyano  
2nd Author's Affiliation Kyushu Institute of Technology (KIT)
3rd Author's Name Seiya Abe  
3rd Author's Affiliation Kyushu Institute of Technology (KIT)
4th Author's Name Satoshi Matumoto  
4th Author's Affiliation Kyushu Institute of Technology (KIT)
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Speaker Author-1 
Date Time 2018-01-29 11:45:00 
Presentation Time 30 minutes 
Registration for EE 
Paper # EE2017-47 
Volume (vol) vol.117 
Number (no) no.424 
Page pp.29-34 
#Pages 6 
Date of Issue 2018-01-22 (EE) 

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