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| Presentation | 2018-01-30 14:00 [Invited Talk] Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Tomohiro Yamashita, Yasuo Yamaguchi (renesas)  SDM2017-94 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Reliability and scalability of split-gate metal-oxide nitride oxide silicon (SG-MONOS) are discussed for 16/14nm-node embedded Flash in FinFET-era. FinFET SG-MONOS array is successfully operated with wide enough program/erase window. The Vth distribution of FinFET SG-MONOS array is kept tighter than planar even after retention. It is also demonstrated that Fin structure enables scaling of the control gate and the memory gate, which leads to the improvement of retention characteristics due to reduction of the mismatch of trapped carrier distribution during program/erase operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | embedded Flash memory / split gate cell / MONOS / FinFET / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 427, SDM2017-94, pp. 13-16, Jan. 2018. | |
| Paper # | SDM2017-94 | |
| Date of Issue | 2018-01-23 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-94 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-01-30 - 2018-01-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reliability and Scalability of FinFET Split-Gate MONOS Array with Tight Vth Distribution for 16/14nm-node Embedded Flash |
| Sub Title (in English) | |
| Keyword(1) | embedded Flash memory |
| Keyword(2) | split gate cell |
| Keyword(3) | MONOS |
| Keyword(4) | FinFET |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shibun Tsuda |
| 1st Author's Affiliation | renesas electronics (renesas) |
| 2nd Author's Name | Tomoya Saito |
| 2nd Author's Affiliation | renesas electronics (renesas) |
| 3rd Author's Name | Hirokazu Nagase |
| 3rd Author's Affiliation | renesas electronics (renesas) |
| 4th Author's Name | Yoshiyuki Kawashima |
| 4th Author's Affiliation | renesas electronics (renesas) |
| 5th Author's Name | Atsushi Yoshitomi |
| 5th Author's Affiliation | renesas electronics (renesas) |
| 6th Author's Name | Shinobu Okanishi |
| 6th Author's Affiliation | renesas electronics (renesas) |
| 7th Author's Name | Tomohiro Hayashi |
| 7th Author's Affiliation | renesas electronics (renesas) |
| 8th Author's Name | Takuya Maruyama |
| 8th Author's Affiliation | renesas electronics (renesas) |
| 9th Author's Name | Masao Inoue |
| 9th Author's Affiliation | renesas electronics (renesas) |
| 10th Author's Name | Seiji Muranaka |
| 10th Author's Affiliation | renesas electronics (renesas) |
| 11th Author's Name | Shigeki Kato |
| 11th Author's Affiliation | renesas electronics (renesas) |
| 12th Author's Name | Takuya Hagiwara |
| 12th Author's Affiliation | renesas electronics (renesas) |
| 13th Author's Name | Hirokazu Saito |
| 13th Author's Affiliation | renesas electronics (renesas) |
| 14th Author's Name | Tadashi Yamaguchi |
| 14th Author's Affiliation | renesas electronics (renesas) |
| 15th Author's Name | Masaru Kadoshima |
| 15th Author's Affiliation | renesas electronics (renesas) |
| 16th Author's Name | Takahiro Maruyama |
| 16th Author's Affiliation | renesas electronics (renesas) |
| 17th Author's Name | Tatsuyoshi Mihara |
| 17th Author's Affiliation | renesas electronics (renesas) |
| 18th Author's Name | Hiroshi Yanagita |
| 18th Author's Affiliation | renesas electronics (renesas) |
| 19th Author's Name | Kenichiro Sonoda |
| 19th Author's Affiliation | renesas electronics (renesas) |
| 20th Author's Name | Tomohiro Yamashita |
| 20th Author's Affiliation | renesas electronics (renesas) |
| 21st Author's Name | Yasuo Yamaguchi |
| 21st Author's Affiliation | renesas electronics (renesas) |
| Speaker | Author-1 |
| Date Time | 2018-01-30 14:00:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2017-94 |
| Volume (vol) | vol.117 |
| Number (no) | no.427 |
| Page | pp.13-16 |
| #Pages | 4 |
| Date of Issue | 2018-01-23 (SDM) |
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