| 講演抄録/キーワード |
| 講演名 |
2018-01-30 15:00
[招待講演]STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET ○Pablo Stoliar(nanoGUNE)・Alejandro Schulman・Ai Kitoh・Akihito Sawa・Isao H. Inoue(AIST) SDM2017-95 |
| 抄録 |
(和) |
(まだ登録されていません) |
| (英) |
We have developed an ultra-stable spike-timing-dependent plasticity (STDP) synapse based on a unique field-effect transistor (FET) that presents a gate-controlled insulator-to-2D-metal transition (IMT). Most of the present sin- gle-device STDP synapses depend on stochastic phenomena (e.g., filament formation) and the instability on spike pulses is inevitable. In contrast, our STDP synapse shows a distinguished stability with a large dynamic range and with very low power consumption. Hand-written digit recognition in a simulated spiking neural network (SNN) for our STDP synapse was also demonstrated. |
| キーワード |
(和) |
/ / / / / / / |
| (英) |
STDP / artificial synapse / insulator-to-2D metal transition / SrTiO3 / / / / |
| 文献情報 |
信学技報, vol. 117, no. 427, SDM2017-95, pp. 17-20, 2018年1月. |
| 資料番号 |
SDM2017-95 |
| 発行日 |
2018-01-23 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| PDFダウンロード |
SDM2017-95 |