Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-01-30 15:00
[Invited Talk] STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET
Pablo Stoliar (nanoGUNE), Alejandro Schulman, Ai Kitoh, Akihito Sawa, Isao H. Inoue (AIST) SDM2017-95
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed an ultra-stable spike-timing-dependent plasticity (STDP) synapse based on a unique field-effect transistor (FET) that presents a gate-controlled insulator-to-2D-metal transition (IMT). Most of the present sin- gle-device STDP synapses depend on stochastic phenomena (e.g., filament formation) and the instability on spike pulses is inevitable. In contrast, our STDP synapse shows a distinguished stability with a large dynamic range and with very low power consumption. Hand-written digit recognition in a simulated spiking neural network (SNN) for our STDP synapse was also demonstrated.
Keyword (in Japanese) (See Japanese page) 
(in English) STDP / artificial synapse / insulator-to-2D metal transition / SrTiO3 / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 427, SDM2017-95, pp. 17-20, Jan. 2018.
Paper # SDM2017-95 
Date of Issue 2018-01-23 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-95

Conference Information
Committee SDM  
Conference Date 2018-01-30 - 2018-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2018-01-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET 
Sub Title (in English)  
Keyword(1) STDP  
Keyword(2) artificial synapse  
Keyword(3) insulator-to-2D metal transition  
Keyword(4) SrTiO3  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Pablo Stoliar  
1st Author's Affiliation CIC nanoGUNE (nanoGUNE)
2nd Author's Name Alejandro Schulman  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Ai Kitoh  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Akihito Sawa  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Isao H. Inoue  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2018-01-30 15:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2017-95 
Volume (vol) vol.117 
Number (no) no.427 
Page pp.17-20 
#Pages 4 
Date of Issue 2018-01-23 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan