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Paper Abstract and Keywords
Presentation 2018-02-23 10:35
[Special Invited Talk] Epitaxial Growth of Ge on Si and Photodetector Applications
Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152
Abstract (in Japanese) (See Japanese page) 
(in English) Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength range (1.3–1.6 µm) are described. In spite of the critical layer thickness of Ge on Si as small as a few nm due to the large lattice mismatch of 4%, high-quality epitaxial layers of Ge with an atomically flat surface are directly grown on Si, using a low-temperature buffer layer technique and a post-growth annealing process. Characteristics for PDs of Ge layers on Si are presented. Strain-engineered PDs for the detection wavelength control and applications to electro-absorption optical modulators as well as light emitters are also introduced.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Photonics / Germanium / Epitaxial Growth / Photodetectors / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 448, LQE2017-152, pp. 7-10, Feb. 2018.
Paper # LQE2017-152 
Date of Issue 2018-02-16 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2017-152

Conference Information
Committee LQE  
Conference Date 2018-02-23 - 2018-02-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2018-02-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Epitaxial Growth of Ge on Si and Photodetector Applications 
Sub Title (in English)  
Keyword(1) Silicon Photonics  
Keyword(2) Germanium  
Keyword(3) Epitaxial Growth  
Keyword(4) Photodetectors  
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1st Author's Name Yasuhiko Ishikawa  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
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Speaker Author-1 
Date Time 2018-02-23 10:35:00 
Presentation Time 60 minutes 
Registration for LQE 
Paper # LQE2017-152 
Volume (vol) vol.117 
Number (no) no.448 
Page pp.7-10 
#Pages 4 
Date of Issue 2018-02-16 (LQE) 

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