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Paper Abstract and Keywords
Presentation 2018-03-08 13:50
[Invited Talk] Present status and prospect of III-V RF devices
Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.) EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67
Abstract (in Japanese) (See Japanese page) 
(in English) III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compared with Si, and suitable for high frequency applications. Present status and prospect of III-V RF devices are discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) III-V Compound Semiconductor Devices / RF Devices / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 496, ED2017-118, pp. 9-10, March 2018.
Paper # ED2017-118 
Date of Issue 2018-03-01 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67

Conference Information
Committee CPM ED EID SDM ICD MRIS QIT SCE 
Conference Date 2018-03-08 - 2018-03-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2018-03-CPM-ED-EID-SDM-ICD-MRIS-QIT-SCE-OME-EMD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Present status and prospect of III-V RF devices 
Sub Title (in English)  
Keyword(1) III-V Compound Semiconductor Devices  
Keyword(2) RF Devices  
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1st Author's Name Naoki Hara  
1st Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
2nd Author's Name Tsuyoshi Takahashi  
2nd Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
3rd Author's Name Yoichi Kawano  
3rd Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
4th Author's Name Yasuhiro Nakasha  
4th Author's Affiliation Fujitsu/Fujitsu Laboratories (Fujitsu/Fujitsu Labs.)
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Speaker Author-1 
Date Time 2018-03-08 13:50:00 
Presentation Time 50 minutes 
Registration for ED 
Paper # EMD2017-73, MR2017-44, SCE2017-44, EID2017-46, ED2017-118, CPM2017-138, SDM2017-118, ICD2017-123, OME2017-67 
Volume (vol) vol.117 
Number (no) no.492(EMD), no.493(MR), no.494(SCE), no.495(EID), no.496(ED), no.497(CPM), no.498(SDM), no.499(ICD), no.500(OME) 
Page pp.9-10 
#Pages 2 
Date of Issue 2018-03-01 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) 

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